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参数资料
| 型号： | HGTG30N60C3D |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 63 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 5/8页 |
| 文件大小： | 144K |
| 代理商： | HGTG30N60C3D |
2001 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
10
20
30
40
E
O
,
V
GE
= 15V
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
50
60
T
J
= 150
o
C, R
G
= 3
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
10
20
30
40
50
60
1.0
2.0
3.0
4.0
5.0
6.0
0
T
J
= 150
o
C, R
G
= 3
, L = 100
μ
H, V
CE(PK)
= 480V
V
GE
= 10V or 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
M
,
5
10
20
30
40
10
100
500
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 3
, L = 100
μ
H
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
=
0.6
o
C/W
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
V
GE
= 15V
V
GE
= 10V
1
60
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
100
200
300
400
500
600
0
50
100
150
200
250
LIMITED BY
CIRCUIT
T
J
= 150
o
C, V
GE
= 15V, L = 100
μ
H
C
OES
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
1000
2000
3000
4000
5000
6000
7000
8000
C
FREQUENCY = 400kHz
C
IES
V
G
,
V
C
,
Q
G
, GATE CHARGE (nC)
I
G
(REF)
= 3.54mA, R
L
= 20
, T
C
= 25
o
C
0
240
120
360
480
600
15
12
9
6
3
V
CE
= 400V
V
CE
= 200V
V
CE
= 600V
0
0
40
80
120
160
200
HGTG30N60C3D
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