参数资料
型号: HIP2100EIBZ
厂商: Intersil
文件页数: 5/12页
文件大小: 0K
描述: IC DRIVER HALF BRIDGE 8EPSOIC
标准包装: 98
配置: 半桥
输入类型: PWM
延迟时间: 20ns
电流 - 峰: 2A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 114V
电源电压: 9 V ~ 14 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm Width)裸露焊盘
供应商设备封装: 8-SOIC-EP
包装: 管件
产品目录页面: 1239 (CN2011-ZH PDF)
HIP2100
Electrical Specifications
V DD = V HB = 12V, V SS = V HS = 0V, No Load on LO or HO, Unless Otherwise Specified. (Continued)
T J = +25°C
T J = -40°C TO +125°C
MIN
MAX
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN TYP MAX
(Note 7)
(Note 7)
UNITS
BOOT STRAP DIODE
Low-Current Forward Voltage
V DL
I VDD-HB = 100μA
-
0.45 0.55
-
0.7
V
High-Current Forward Voltage
Dynamic Resistance
V DH
R D
I VDD-HB = 100mA
I VDD-HB = 100mA
-
-
0.7
0.8
0.8
1
-
-
1
1.5
V
Ω
LO GATE DRIVER
Low Level Output Voltage
High Level Output Voltage
Peak Pullup Current
Peak Pulldown Current
V OLL
V OHL
I OHL
I OLL
I LO = 100mA
I LO = -100mA, V OHL = V DD -V LO
V LO = 0V
V LO = 12V
-
-
-
-
0.25
0.25
2
2
0.3
0.3
-
-
-
-
-
-
0.4
0.4
-
-
V
V
A
A
HO GATE DRIVER
Low Level Output Voltage
High Level Output Voltage
Peak Pullup Current
Peak Pulldown Current
V OLH
V OHH
I OHH
I OLH
I HO = 100mA
I HO = -100mA, V OHH = V HB -V HO
V HO = 0V
V HO = 12V
-
-
-
-
0.25
0.25
2
2
0.3
0.3
-
-
-
-
-
-
0.4
0.4
-
-
V
V
A
A
Switching Specifications
V DD = V HB = 12V, V SS = V HS = 0V, No Load on LO or HO, Unless Otherwise Specified.
T J = +25°C
T J = -40°C TO + 125°C
TEST
MIN
MAX
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX
(Note 7)
(Note 7)
UNITS
Lower Turn-Off Propagation Delay (LI Falling to LO Falling)
Upper Turn-Off Propagation Delay (HI Falling to HO Falling)
Lower Turn-On Propagation Delay (LI Rising to LO Rising)
Upper Turn-On Propagation Delay (HI Rising to HO Rising)
Delay Matching: Lower Turn-On and Upper Turn-Off
Delay Matching: Lower Turn-Off and Upper Turn-On
t LPHL
t HPHL
t LPLH
t HPLH
t MON
t MOFF
-
-
-
-
-
-
20
20
20
20
2
2
35
35
35
35
8
8
-
-
-
-
-
-
45
45
45
45
10
10
ns
ns
ns
ns
ns
ns
Either Output Rise/Fall Time
Either Output Rise/Fall Time (3V to 9V)
Either Output Rise Time Driving DMOS
Either Output Fall Time Driving DMOS
Minimum Input Pulse Width that Changes the Output
Bootstrap Diode Turn-On or Turn-Off Time
t RC , t FC
t R , t F
t RD
t FD
t PW
t BS
C L = 1000pF
C L = 0.1μF
C L = IRFR120
C L = IRFR120
-
-
-
-
-
-
10
0.5
20
10
-
10
-
0.6
-
-
-
-
-
-
-
-
-
-
-
0.8
-
-
50
-
ns
μs
ns
ns
ns
ns
NOTE:
7. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
5
FN4022.14
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