参数资料
| 型号： | HIP6004BCB-T |
| 厂商： | Intersil |
| 文件页数： | 11/15页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR PWM VOLTAGE MON 20-SOIC |
| 标准包装： | 1,000 |
| 应用： | 控制器，Intel Pentium?，II，Pro |
| 输入电压： | 5V，12V |
| 输出数： | 1 |
| 输出电压： | 1.3 V ~ 3.5 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 20-SOIC W |
| 包装： | 带卷 (TR) |
HIP6004B
below). Only the upper MOSFET has switching losses, since
the Schottky rectifier clamps the switching node before the
synchronous rectifier turns on. These equations assume linear
voltage-current transitions and do not adequately model power
loss due the reverse-recovery of the lower MOSFET’s body
diode. The gate-charge losses are dissipated by the HIP6004B
and don't heat the MOSFETs. However, large gate-charge
increases the switching interval, t SW which increases the upper
MOSFET switching losses. Ensure that both MOSFETs are
within their maximum junction temperature at high ambient
temperature by calculating the temperature rise according to
package thermal-resistance specifications. A separate heatsink
may be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
Figure 10 shows the upper gate drive supplied by a direct
connection to V CC . This option should only be used in
converter systems where the main input voltage is +5V DC or
less. The peak upper gate-to-source voltage is approximately
V CC less the input supply. For +5V main power and +12V DC
for the bias, the gate-to-source voltage of Q 1 is 7V. A logic-
level MOSFET is a good choice for Q 1 and a logic-level
MOSFET can be used for Q 2 if its absolute gate-to-source
voltage rating exceeds the maximum voltage applied to V CC .
+12V
+5V OR LESS
V CC
P UPPER = Io 2 x r DS(ON) x D +
1
2
Io x V IN x t SW x F S
HIP6004B
BOOT
P LOWER = Io 2 x r DS(ON) x (1 - D)
Where: D is the duty cycle = V OUT / V IN ,
t SW is the switch ON time, and
UGATE
PHASE
Q 1
NOTE:
V G-S ≈ V CC -5V
F S is the switching frequency.
Standard-gate MOSFETs are normally recommended for
use with the HIP6004B. However, logic-level gate MOSFETs
can be used under special circumstances. The input voltage,
-
+
LGATE
PGND
GND
Q 2
D 2
NOTE:
V G-S ≈ V CC
upper gate drive level, and the MOSFET’s absolute gate-to-
source voltage rating determine whether logic-level
MOSFETs are appropriate.
Figure 9 shows the upper gate drive (BOOT pin) supplied by a
bootstrap circuit from V CC . The boot capacitor, C BOOT
develops a floating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a voltage of V CC
less the boot diode drop (V D ) when the lower MOSFET, Q 2
turns on. Logic-level MOSFETs can only be used if the
MOSFET’s absolute gate-to-source voltage rating exceeds
the maximum voltage applied to V CC .
+12V
D BOOT
FIGURE 10. UPPER GATE DRIVE - DIRECT V CC DRIVE OPTION
Schottky Selection
Rectifier D 2 is a clamp that catches the negative inductor
swing during the dead time between turning off the lower
MOSFET and turning on the upper MOSFET. The diode
must be a Schottky type to prevent the lossy parasitic
MOSFET body diode from conducting. It is acceptable to
omit the diode and let the body diode of the lower MOSFET
clamp the negative inductor swing, but efficiency will drop
one or two percent as a result. The diode’s rated reverse
breakdown voltage must be greater than the maximum
input voltage.
V CC
HIP6004B
+ V D -
BOOT
UGATE
PHASE
C BOOT
+5V OR +12V
Q1
NOTE:
V G-S ≈ V CC -V D
-
+
LGATE
PGND
Q2
D2
NOTE:
V G-S ≈ V CC
GND
FIGURE 9. UPPER GATE DRIVE - BOOTSTRAP OPTION
11
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| HIP6004BCBZ | 功能描述:电压模式 PWM 控制器 PWM CNTRLR 3 5 TO 1 3 DAC RNG 20LD RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| HIP6004BCBZA | 功能描述:电压模式 PWM 控制器 W/ANNEAL PWM CNTRLR 3 5 TO 1 3 DAC RNG RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| HIP6004BCBZA-T | 功能描述:电压模式 PWM 控制器 W/ANNEAL PWM CNTRLR 3 5V TO 1 3V DAC RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| HIP6004BCBZ-T | 功能描述:电压模式 PWM 控制器 PWM CNTRLR 3 5V TO 1 3V DAC 20LD TA RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| HIP6004BCR | 功能描述:IC CTRLR PWM VOLTAGE MON 20-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
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