参数资料
型号: HIP6301VCB
厂商: Intersil
文件页数: 18/20页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM 20-SOIC
标准包装: 38
PWM 型: 控制器
输出数: 4
频率 - 最大: 336kHz
电源电压: 4.75 V ~ 5.25 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: 0°C ~ 70°C
封装/外壳: 20-SOIC(0.295",7.50mm 宽)
包装: 管件
However, large gate-charge increases the switching time,
t SW which increases the upper MOSFET switching losses.
Ensure that both MOSFETs are within their maximum
junction temperature at high ambient temperature by
calculating the temperature rise according to package
thermal-resistance specifications. A separate heatsink may
be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
I O × r DS ( ON ) × V OUT
I O × V IN × t SW × F SW
P UPPER = ------------------------------------------------------------ + ----------------------------------------------------------
V IN
2
2
(EQ. 9)
I O × r DS ( ON ) × ( V IN – V OUT )
P LOWER = ---------------------------------------------------------------------------------
2
V IN
A diode, anode to ground, may be placed across Q 2 and Q 4
of Figure 1. These diodes function as a clamp that catches
the negative inductor swing during the dead time between
the turn off of the lower MOSFETs and the turn on of the
upper MOSFETs. The diodes must be a Schottky type to
prevent the lossy parasitic MOSFET body diode from
conducting. It is usually acceptable to omit the diodes and let
the body diodes of the lower MOSFETs clamp the negative
inductor swing, but efficiency could drop one or two percent
as a result. The diode's rated reverse breakdown voltage
must be greater than the maximum input voltage.
18
FN9034.3
May 5, 2008
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