参数资料
型号: HIP6501ACB-T
厂商: Intersil
文件页数: 12/14页
文件大小: 0K
描述: IC PWM TRIPLE POWER CTRLR 16SOIC
标准包装: 2,500
应用: 电源控制器
电源电压: 5V,12V
电流 - 电源: 20mA
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC
包装: 带卷 (TR)
HIP6501A
Q4
If a P-Channel MOSFET is used to switch the 5VSB output
of the ATX supply into the 5V DUAL output during S3 and
S4/S5 states (as dictated by EN5VDL status), then, similar to
the situation where Q1 is a MOSFET, the selection criteria of
this device is also proper voltage budgeting. The maximum
r DS(ON) , however, has to be achieved with only 4.5V of V GS ,
so a logic level MOSFET needs to be selected. If a PNP
device is chosen to perform this function, it has to have a low
saturation voltage while providing the maximum sleep-state
current and have a current gain sufficiently high to be
saturated using the minimum drive current (typically 20mA;
4mA during soft-start).
12
Q3, Q5
The two N-Channel MOSFETs are used to switch the 3.3V
and 5V inputs provided by the ATX supply into the
3.3VDUAL and 5VDUAL outputs, respectively, while in
active (S0, S1) states. Similar r DS(ON) criteria apply in these
cases as well, unlike the PMOS, however, these NMOS
transistors get the benefit of an increased V GS drive
(approximately 8V and 7V, respectively).
Q2
The NPN transistor used as sleep-state pass element on the
3.3V DUAL output must have a minimum current gain of 100
at V CE = 1.5V, and I CE = 500mA throughout the in-circuit
operating temperature range.
FN4749.6
December 30, 2004
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