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参数资料
| 型号： | HM-6516883 |
| 厂商： | Intersil Corporation |
| 英文描述： | 2K x 8 CMOS RAM |
| 中文描述： | 2K × 8 CMOS存储器 |
| 文件页数： | 3/8页 |
| 文件大小： | 201K |
| 代理商： | HM-6516883 |
175
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input or Output Voltage Applied for all Grades. . . . . . .GND -0.3V to
VCC +0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
CERDIP Package . . . . . . . . . . . . . . . .
CLCC Package . . . . . . . . . . . . . . . . . .
Maximum Storage Temperature Range . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . +175
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300
o
C
θ
JA
θ
JC
8
o
C/W
12
o
C/W
48
o
C/W
66
o
C/W
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25953 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range. . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to +0.8V
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.4V to VCC
Data Retention Supply Voltage. . . . . . . . . . . . . . . . . . . 2.0V to 4.5V
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . 40ns Max
TABLE 1. HM-6516/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
High Level
Output Voltage
VOH
VCC = 4.5V
IO = -1.0mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
2.4
-
V
Low Level
Output Voltage
VOL
VCC = 4.5V
IO = 3.2mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
0.4
V
High Impedance
Output Leakage
Current
IIOZ
VCC = G = 5.5 V,
VIO = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-1.0
1.0
μ
A
Input Leakage
Current
II
VCC = 5.5V,
VI = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-1.0
1.0
μ
A
Operating Supply
Current
ICCOP
VCC = G = 5.5V, (Note 2)
f = 1MHz, VI = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
10
mA
Standby Supply
Current
ICCSB1
VCC = 5.5V, HM-6516/883
E = VCC-0.3V,
IO = 0mA, VI = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
100
μ
A
VCC = 5.5V, HM-6516B/883
E = VCC -0.3V,
IO = 0mA, VI = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
50
μ
A
Data Retention
Supply Current
ICCDR
VCC = 2.0V, HM-6516/883
E = VCC-0.3V,
IO = 0mA, VI = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
50
μ
A
VCC = 2.0V, HM-6516B/883
E = VCC-0.3V,
IO = 0mA, VI = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
25
μ
A
Functional Test
FT
VCC = 4.5V (Note 3)
7, 8A, 8B
-55
o
C
≤
T
A
≤
+125
o
C
-
-
-
NOTES:
1. All voltages referenced to device GND.
2. Typical derating 1.5mA/MHz increase in ICCOP.
3. Tested as follows: f = 2MHz, VIH = 2.4V, VIL = 0.4V, IOH = -4.0mA, IOL = 4.0mA, VOH
≥
1.5V, and VOL
≤
1.5V.
HM-6516/883
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