参数资料
型号: HM-6516883
厂商: Intersil Corporation
英文描述: 2K x 8 CMOS RAM
中文描述: 2K × 8 CMOS存储器
文件页数: 5/8页
文件大小: 201K
代理商: HM-6516883
177
TABLE 3. HM-6516/883 ELECTRICAL PERFORMANCE SPECIFICATIONS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Capacitance
CI
VCC = Open, f = 1MHz, All
Measurements Referenced
to Device Ground
1, 2
T
A
= +25
o
C
-
8
pF
VCC = Open, f = 1MHz, All
Measurements Referenced
to Device Ground
1, 3
T
A
= +25
o
C
-
12
pF
Input/Output
Capacitance
CIO
VCC = Open, f = 1MHz, All
Measurements Referenced
to Device Ground
1, 2
T
A
= +25
o
C
-
10
pF
VCC = Open, f = 1MHz, All
Measurements Referenced
to Device Ground
1, 3
T
A
= +25
o
C
-
14
pF
Chip Enable to Output
Valid Time
(3) TELQX
VCC = 4.5 and 5.5V
1
-55
o
C
T
A
+125
o
C
10
-
ns
Write Enable Output
Disable Time
(4) TWLQZ
VCC = 4.5 and 5.5V
HM-6516/883
1
-55
o
C
T
A
+125
o
C
-
80
ns
VCC = 4.5 and 5.5V
HM-6516B/883
1
-55
o
C
T
A
+125
o
C
-
50
ns
Chip Enable Output
Disable Time
(5) TEHQZ
VCC = 4.5 and 5.5V
HM-6516/883
1
-55
o
C
T
A
+125
o
C
-
80
ns
VCC = 4.5 and 5.5V
HM-6516B/883
1
-55
o
C
T
A
+125
o
C
-
50
ns
Output Enable
Access Time
(6) TGLQV
VCC = 4.5 and 5.5V
1
-55
o
C
T
A
+125
o
C
-
80
ns
Output Enable to
Output Valid Time
(7) TGLQX
VCC =
4.5 and 5.5V
1
-55
o
C
T
A
+125
o
C
10
-
ns
Output Disable Time
(8) TGHQZ
VCC = 4.5 and 5.5V
HM-6516/883
1
-55
o
C
T
A
+125
o
C
-
80
ns
VCC = 4.5 and 5.5V
HM-6516B/883
1
-55
o
C
T
A
+125
o
C
-
50
ns
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters are
characterized upon initial design release and upon design changes which would affect these characteristics.
2. Applies to LCC device types only.
3. Applies to DIP device types only.
TABLE 4. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
SUBGROUPS
Initial Test
100%/5004
-
Interim Test
100%/5004
1, 7, 9
PDA
100%/5004
1
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A
Samples/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Groups C & D
Samples/5005
1, 7, 9
HM-6516/883
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