参数资料
型号: HM5165405LTT-5
厂商: ELPIDA MEMORY INC
元件分类: DRAM
英文描述: 16M X 4 EDO DRAM, 50 ns, PDSO32
封装: 0.400 INCH, PLASTIC, TSOP2-32
文件页数: 33/35页
文件大小: 377K
代理商: HM5165405LTT-5
HM5164405 Series, HM5165405 Series
7
Operation Table
5$6
&$6
:(
2(
I/O 0 to I/O 3
Operation
H
×××
High-Z
Standby
L
H
L
Dout
Read cycle
LL
L*
2
×
Din
Early write cycle
LL
L*
2
H
Din
Delayed write cycle
L
H to L
L to H
Dout/Din
Read-modify-write cycle
LH
××
High-Z
5$6-only refresh cycle
H to L
L
H
×
High-Z
&$6-before-5$6 refresh cycle or
Self refresh cycle (L-version)
L
H
High-Z
Read cycle (Output disabled)
Notes: 1. H: V
IH (inactive), L: VIL (active), ×: VIH or VIL
2. t
WCS ≥ 0 ns:
Early write cycle
t
WCS < 0 ns:
Delayed write cycle
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Terminal voltage on any pin relative to V
SS
V
T
–0.5 to V
CC + 0.5 (≤ 4.6 V (max))
V
Power supply voltage relative to V
SS
V
CC
–0.5 to +4.6
V
Short circuit output current
Iout
50
mA
Power dissipation
P
T
1.0
W
Storage temperature
Tstg
–55 to +125
°C
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Supply voltage
V
CC
3.0
3.3
3.6
V
1, 2
V
SS
00
0
V
2
Input high voltage
V
IH
2.0
V
CC + 0.3
V
1
Input low voltage
V
IL
–0.3
0.8
V
1
Ambient temperature range
Ta
0
70
_C
Notes: 1. All voltage referred to V
SS.
2. The supply voltage with all V
CC pins must be on the same level.
The supply voltage with all V
SS
pins must be on the same level.
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