参数资料
型号: HM5165405LTT-5
厂商: ELPIDA MEMORY INC
元件分类: DRAM
英文描述: 16M X 4 EDO DRAM, 50 ns, PDSO32
封装: 0.400 INCH, PLASTIC, TSOP2-32
文件页数: 7/35页
文件大小: 377K
代理商: HM5165405LTT-5
HM5164405 Series, HM5165405 Series
15
Self Refresh Mode (L-version)
HM5164405L/HM5165405L
-5
-6
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
5$6 pulse width (self refresh)
t
RASS
100
100
s
26
5$6 precharge time (self refresh)
t
RPS
90
110
ns
26
&$6 hold time (self refresh)
t
CHS
–50
–50
ns
Notes: 1. AC measurements assume t
T = 2 ns.
2. An initial pause of 200 s is required after power up followed by a minimum of eight initialization
cycles (any combination of cycles containing
5$6-only refresh or &$6-before-5$6 refresh).
3. Operation with the t
RCD (max) limit insures that tRAC (max) can be met, tRCD (max) is specified as a
reference point only; if t
RCD is greater than the specified tRCD (max) limit, than the access time is
controlled exclusively by t
CAC.
4. Operation with the t
RAD (max) limit insures that tRAC (max) can be met, tRAD (max) is specified as a
reference point only; if t
RAD is greater than the specified tRAD (max) limit, then access time is
controlled exclusively by t
AA.
5. Either t
OED or tCDD must be satisfied.
6. Either t
DZO or tDZC must be satisfied.
7. V
IH (min) and VIL (max) are reference levels for measuring timing of input signals. Also,
transition times are measured between V
IH (min) and VIL (max).
8. Assumes that t
RCD ≤ tRCD (max) and tRAD ≤ tRAD (max).
If t
RCD or tRAD is greater than the maximum
recommended value shown in this table, t
RAC exceeds the value shown.
9. Measured with a load circuit equivalent to 1 TTL loads and 100 pF.
10. Assumes that t
RCD ≥ tRCD (max) and tRCD + tCAC (max) ≥ tRAD + tAA (max).
11. Assumes that t
RAD ≥ tRAD (max) and tRCD + tCAC (max) ≥ tRAD + tAA (max).
12. Either t
RCH or tRRH must be satisfied for a read cycles.
13. t
OFF (max), tOEZ (max), tWEZ (max) and tOFR (max) define the time at which the outputs achieve the
open circuit condition and are not referred to output voltage levels.
14. t
WCS, tRWD, tCWD, tAWD and tCPW are not restrictive operating parameters.
They are included in the
data sheet as electrical characteristics only; if t
WCS ≥ tWCS (min), the cycle is an early write cycle
and the data out pin will remain open circuit (high impedance) throughout the entire cycle; if t
RWD
≥ t
RWD (min), tCWD ≥ tCWD (min), and tAWD ≥ tAWD (min), or tCWD ≥ tCWD (min), tAWD ≥ tAWD (min) and tCPW
t
CPW (min), the cycle is a read-modify-write and the data output will contain data read from the
selected cell; if neither of the above sets of conditions is satisfied, the condition of the data out
(at access time) is indeterminate.
15. t
DS and tDH are referred to &$6 leading edge in early write cycles and to :( leading edge in
delayed write or read-modify-write cycles.
16. t
RASP defines 5$6 pulse width in EDO page mode cycles.
17. Access time is determined by the longest among t
AA, tCAC and tCPA.
18. In delayed write or read-modify-write cycles,
2( must disable output buffer prior to applying
data to the device.
19. When output buffers are enabled once, sustain the low impedance state until valid data is
obtained. When output buffer is turned on and off within a very short time, generally it causes
large V
CC/VSS line noise, which causes to degrade VIH min/VIL max
level.
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