参数资料
型号: HMC449
厂商: HITTITE MICROWAVE CORP
元件分类: 倍频器
英文描述: 27000 MHz - 33000 MHz RF/MICROWAVE FREQUENCY DOUBLER
封装: 1.20 X 1.10 MM, 0.10 MM HEIGHT, DIE-4
文件页数: 1/6页
文件大小: 235K
代理商: HMC449
F
R
E
Q
U
E
NC
Y
MU
L
T
IP
L
IE
R
S
-
A
C
T
IV
E
-
C
H
IP
2
2 - 32
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC449
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 27 - 33 GHz OUTPUT
v01.1007
General Description
Features
Functional Diagram
Electrical Specifications, T
A = +25° C, Vdd= 5.0V, 0 dBm Drive Level
Typical Applications
The HMC449 is suitable for:
Point-to-Point & Multi-Point Radios
VSAT Radios
Military EW, ECM, C3I
Test Instrumentation
Space
The
HMC449
die
is
a
x2
active
broadband
frequency multiplier chip utilizing GaAs PHEMT
technology. When driven by a 0 dBm signal the
multiplier provides +10 dBm typical output power
from 28 to 32 GHz. The Fo and 3Fo isolations
are >34 dBc and >17 dBc respectively at 30 GHz.
The HMC449 is ideal for use in LO multiplier
chains yielding a reduced parts count vs. traditional
approaches. The low additive SSB Phase Noise of
-132 dBc/Hz at 100 kHz offset helps maintain good
system noise performance. All data is with the chip
in a 50 ohm test fixture connected via 0.076mm x
0.0127mm (3mil x 0.5mil) ribbon bonds of minimal
length 0.31mm (<12mils).
Output Power: +10 dBm
Wide Input Power Range: -4 to +6 dBm
Fo Isolation: 34 dBc @ Fout= 30 GHz
100 kHz SSB Phase Noise: -132 dBc/Hz
Single Supply: 5V @ 50 mA
Die Size: 1.10 x 1.20 x 0.1 mm
Parameter
Min.
Typ.
Max.
Units
Frequency Range, Input
13.5 - 16.5
GHz
Frequency Range, Output
27 - 33
GHz
Output Power
610
dBm
Fo Isolation (with respect to output level) Fout= 30 GHz
34
dBc
3Fo Isolation (with respect to output level) Fout= 30 GHz
17
dBc
Input Return Loss
13
dB
Output Return Loss
9dB
SSB Phase Noise (100 kHz Offset)
-132
dBc/Hz
Supply Current (Idd)
50
70
mA
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