参数资料
型号: HMC451LC3
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 5000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 3 X 3 MM, ROHS COMPLIANT, LEADLESS, ALUMINIUM, SMT, 16 PIN
文件页数: 3/6页
文件大小: 235K
代理商: HMC451LC3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 128
Power Compression @ 10 GHz
Output IP3 vs. Temperature
Noise Figure vs. Temperature
Gain, P1dB & PSAT
vs. Supply Voltage @ 11 GHz
Reverse Isolation vs. Temperature
Power Compression @ 20 GHz
0
4
8
12
16
20
24
-18 -16 -14 -12 -10
-8
-6
-4
-2
0246
Pout (dBm)
Gain (dB)
PAE (%)
Pout
(dBm),
GAIN
(dB),
PAE
(%)
INPUT POWER (dBm)
0
4
8
12
16
20
24
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout (dBm)
Gain (dB)
PAE (%)
Pout
(dBm),
GAIN
(dB),
PAE
(%)
INPUT POWER (dBm)
16
20
24
28
32
36
40
4
6
8
101214
161820
22
+25C
+85C
-40C
IP3
(dBm)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
4
6
8
101214
161820
22
+25C
+85C
-40C
ISOLATION
(dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
11
4
6
8
101214
161820
22
+25C
+85C
-40C
NOI
SE
FI
GURE
(dB)
FREQUENCY (GHz)
HMC451LC3
v04.1208
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
16
17
18
19
20
21
22
4.5
5
5.5
Gain
P1dB
Psat
GAIN
(dB),
P1dB
(d
Bm),
Psat
(dBm)
Vdd (Volts)
相关PDF资料
PDF描述
HMC451LP3E 5000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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HMC451LC3_08 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz
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