参数资料
型号: HMC451LC3
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 5000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 3 X 3 MM, ROHS COMPLIANT, LEADLESS, ALUMINIUM, SMT, 16 PIN
文件页数: 4/6页
文件大小: 235K
代理商: HMC451LC3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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IN
E
A
R
&
P
O
W
E
R
A
M
P
L
IF
IE
R
S
-
SM
T
11
11 - 129
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd
1
= Vdd
2
)
+5.5 Vdc
RF Input Power (RFIN)(Vdd = +5Vdc)
+10 dBm
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 12.4 mW/°C above 85 °C)
1.1 W
Thermal Resistance
(channel to ground paddle)
80 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Vdd
1
= Vdd
2
(V)
Idd
1
= Idd
2
(mA)
+4.5
111
+5.0
114
+5.5
116
Note: Amplifier will operate over full voltage range shown above
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50
MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Typical Supply Current vs. Vdd
1 = Vdd2
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC451LC3
v04.1208
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
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