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参数资料
| 型号： | HMC451LP3 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 5000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, LEADLESS, PLASTIC, SMT, 16 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 617K |
| 代理商： | HMC451LP3 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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Power Compression @ 10 GHz
Output IP3 vs. Temperature
Noise Figure vs. Temperature
Gain, P1dB & PSAT
vs. Supply Voltage @ 11 GHz
Reverse Isolation vs. Temperature
Power Compression @ 17 GHz
HMC451LP3 / 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
0
4
8
12
16
20
24
-18
-14
-10
-6
-2
2
6
Pout (dBm)
Gain (dB)
PAE (%)
P
ou
t(
dB
m
),
G
A
IN
(d
B
),
P
A
E
(%
)
INPUT POWER (dBm)
0
4
8
12
16
20
24
-18
-14
-10
-6
-2
2
6
Pout (dBm)
Gain (dB)
PAE (%)
P
ou
t(
dB
m
),
G
A
IN
(d
B
),
P
A
E
(%
)
INPUT POWER (dBm)
20
22
24
26
28
30
32
4
6
8
10
12
14
16
18
20
+25C
+85C
-40C
IP3
(dBm
)
FREQUENCY (GHz)
2
4
6
8
10
12
4
6
8
10
12
14
16
18
20
+25C
+85C
-40C
N
O
IS
E
F
IG
U
R
E
(d
B
)
FREQUENCY (GHz)
16
17
18
19
20
21
22
4.5
5
5.5
Gain
P1dB
Psat
G
A
IN
(d
B
),
P
1d
B
(d
Bm),
Psat
(dBm)
Vdd (V)
-60
-50
-40
-30
-20
-10
0
4
6
8
10
12
14
16
18
20
+25C
+85C
-40C
IS
O
LA
T
IO
N
(d
B
)
FREQUENCY (GHz)
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|---|---|
| HMC451LP3E | 功能描述:IC MMIC PWR AMP 16QFN RoHS:是 类别:RF/IF 和 RFID >> RF 放大器 系列:- 标准包装:3,000 系列:- 频率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音数据:1.3dB RF 型:CDMA，TDMA，PCS 电源电压:2.7 V ~ 5 V 电流 - 电源:60mA 测试频率:2GHz 封装/外壳:0505（1412 公制） 包装:带卷 (TR) |
| HMC451LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC PWR AMP 16QFN 制造商:Hittite Microwave Corp 功能描述:HMC451 Series 5 - 18 GHz GaAs PHEMT MMIC Medium Power Amplifier - QFN-16 制造商:Hittite Microwave Corp 功能描述:medium power amp, 5-18ghz |
| HMC451-SX | 功能描述:RF Amplifier IC General Purpose 5GHz ~ 20GHz Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:要求报价 频率:5GHz ~ 20GHz P1dB:19dBm 增益:18dB 噪声系数:6.5dB RF 类型:通用 电压 - 电源:5V 电流 - 电源:114mA 测试频率:15GHz ~ 18GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC452QS16G | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
| HMC452QS16G_06 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
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