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参数资料
| 型号： | HMC451LP3 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 5000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 3 X 3 MM, LEADLESS, PLASTIC, SMT, 16 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 617K |
| 代理商： | HMC451LP3 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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9 - 4
Absolute Maximum Ratings
Drain Bias Voltage (Vdd
1 = Vdd2)
+5.5V
rf input power (rfin)(Vdd = +5Vdc)
+10 dBm
Channel Temperature
150 °C
Continuous pdiss (T = 85 °C)
(derate 12.8 mw/°C above 85 °C)
0.83 w
Thermal resistance
(channel to ground paddle)
78 °C/w
storage Temperature
-65 to +150 °C
operating Temperature
-40 to +85 °C
Vdd
1 = Vdd2 (V)
idd
1 + idd2 (mA)
+4.5
120
+5.0
122
+5.5
124
note: Amplifier will operate over full voltage range shown above
Typical Supply Current vs. Vdd
1 = Vdd2
eleCTrosTATiC sensiTiVe DeViCe
oBserVe HAnDlinG preCAUTions
HMC451LP3 / 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
Outline Drawing
noTes:
1. leADfrAme mATeriAl: Copper AlloY
2. Dimensions Are in inCHes [millimeTers]
3. leAD spACinG TolerAnCe is non-CUmUlATiVe
4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm.
pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm.
5. pACKAGe wArp sHAll noT eXCeeD 0.05mm.
6. All GroUnD leADs AnD GroUnD pADDle mUsT Be
solDereD To pCB rf GroUnD.
7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD
lAnD pATTern.
part number
package Body material
lead finish
msl rating
package marking [3]
HmC451lp3
low stress injection molded plastic
sn/pb solder
msl1
[1]
451
XXXX
HmC451lp3e
roHs-compliant low stress injection molded plastic
100% matte sn
msl1
[2]
451
XXXX
[1] max peak reflow temperature of 235 °C
[2] max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
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