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参数资料
| 型号： | HMC580ST89E |
| 厂商： | Hittite Microwave Corporation |
| 文件页数： | 5/6页 |
| 文件大小： | 0K |
| 描述： | IC GAIN BLOCK AMP SOT89 |
| 标准包装： | 1 |
| 频率： | 0Hz ~ 1GHz |
| P1dB： | 19dBm |
| 增益： | 17dB |
| 噪音数据： | 2.8dB |
| RF 型： | 通用 |
| 电源电压： | 5V |
| 电流 - 电源： | 110mA |
| 封装/外壳： | TO-243AA |
| 包装： | 标准包装 |
| 其它名称： | 1127-1059-6 |
HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz
Pin Descriptions
8
Pin Number
1
3
2, 4
Function
IN
OUT
GND
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
RF output and DC Bias (Vcc) for the output stage.
These pins and package bottom
must be connected to RF/DC ground.
Interface Schematic
Application Circuit
Recommended Bias Resistor Values
for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc, Vs > +5V
Supply Voltage (Vs)
R BIAS V ALUE
R BIAS P OWER R ATING
6V
13 Ω
?W
8V
36 Ω
?W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R BIAS provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies with Vs = +5V
Frequency (MHz)
Component
50
250
400
900
L1
C1, C2
Rbias
270 nH
0.01 μF
0 Ohms
110 nH
820 pF
1.5 Ohms
110 nH
820 pF
1.5 Ohms
56 nH
100 pF
1.8 Ohms
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
8 - 150
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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相关代理商/技术参数 |
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| HMC580ST89ETR | 制造商:Hittite Microwave Corp 功能描述:IC GAIN BLOCK AMP SOT89 制造商:Hittite Microwave Corp 功能描述:HMC580 Series DC - 1 GHz InGaP HBT Gain Block MMIC Amplifier - SOT-89 制造商:Hittite Microwave Corp 功能描述:NA ONLY -HMC580 Series DC - 1 GHz InGaP HBT Gain Block MMIC Amplifier - SOT-89 |
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| HMC582LP5 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 11.1 - 12.4 GHz |
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