参数资料
型号: HMC605LP3
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 2300 MHz - 2700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封装: PLASTIC, SMT, 16 PIN
文件页数: 5/8页
文件大小: 248K
代理商: HMC605LP3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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O
W
NO
IS
E
A
M
P
L
IF
IE
R
S
-
SM
T
8
8 - 234
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
+5
74
+3
28
Drain Bias Voltage (Vdd)
+8 Vdc
RF Input Power (RFIN)
(Vdd = +5.0 Vdc)
LNA Mode
Bypass Mode
+15 dBm
+30 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 13.7 mW/°C above 85 °C)
890 mW
Thermal Resistance
(channel to ground paddle)
73 °C/W
Storage Temperature
-65 to +150° C
Operating Temperature
-40 to +85° C
Absolute Maximum Ratings
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
LNA Mode
Vctl = Vdd ±0.3V
Bypass Mode
Vctl= 0V ±0.3V
Truth Table
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC605LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
605
XXXX
HMC605LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
605
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC605LP3 / 605LP3E
v03.0809
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
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