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参数资料
| 型号： | HMC608LC4 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 9500 MHz - 11500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, LEADLESS, SMT, 24 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 948K |
| 代理商： | HMC608LC4 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC608LC4
GaAs pHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
v02.1208
General Description
Features
Functional Diagram
The HmC608lC4 is a high dynamic range GaAs
pHemT mmiC medium power Amplifier housed in a
leadless “pb free” smT package. The amplifier has
two modes of operation: high gain mode (Vpd pin
shorted to ground); and low gain mode (Vpd pin left
open). The electrical specifications in the table below
are shown for the amplifier operating in high gain
mode. operating from 9.5 to 11.5 GHz, the amplifier
provides 29.5 dB of gain, +27.5 dBm of saturated
power and 23% pAe from a +5V supply voltage.
noise figure is 6 dB while output ip3 is +33 dBm. The
rf i/os are DC blocked and matched to 50 ohms
for ease of use. The HmC608lC4 eliminates the
need for wire bonding, allowing use of surface mount
manufacturing techniques.
output ip3: +33 dBm
saturated power: +27.5 dBm @ 23% pAe
Gain: 29.5 dB
supply: +5V @ 310 mA
50 ohm matched input/output
roHs Compliant 4x4 mm smT package
Electrical Specifications, T
A = +25° C, Vdd1, 2, 3 = 5V, Idd = 310 mA
[1], Vpd = GND [2]
Typical Applications
The HmC608lC4 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios
Military End-Use
parameter
min.
Typ.
max.
Units
frequency range
9.5 - 11.5
GHz
Gain [3]
27
29.5
dB
Gain Variation over Temperature
0.02
0.03
dB/ °C
input return loss
13
dB
output return loss
19
dB
output power for 1 dB Compression (p1dB)
23
27
dBm
saturated output power (psat)
27.5
dBm
output Third order intercept (ip3)
33
dBm
noise figure
6.0
dB
supply Current (idd = idd1 +idd2 +idd3)(Vdd = +5V, Vgg = -2.6V Typ.) [3]
310
350
mA
[[1] Adjust Vgg between -3 to 0V to achieve idd = 310 mA typical.
[2] Vpd= ground for high gain mode, Vpd = open for low gain mode.
[3] in low gain mode, typical gain is 22 dB and typical current is 67 mA.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC608LC4_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz |
| HMC609 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER |
| HMC609_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz |
| HMC609LC4 | 制造商:Hittite Microwave Corp 功能描述:IC MMIC LNA GAAS 24SMD |
| HMC609LC4_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz |
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