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参数资料
| 型号： | HMC608LC4 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 9500 MHz - 11500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, LEADLESS, SMT, 24 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 948K |
| 代理商： | HMC608LC4 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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Power Compression @ 10.3 GHz
Output IP3 vs. Temperature
Noise Figure vs. Temperature
Gain, Power & Output IP3
vs. Supply Voltage @ 10.3 GHz
Reverse Isolation vs. Temperature
0
10
20
30
40
9
9.5
10
10.5
11
11.5
+25C
+85C
-40C
IP3
(dBm
)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
9
9.5
10
10.5
11
11.5
+25C
+85C
-40C
IS
O
LA
T
IO
N
(d
B
)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
Pout
Gain
PAE
P
ou
t(
dB
m
),
G
A
IN
(d
B
),
P
A
E
(%
)
Pin (dBm)
0
2
4
6
8
10
9
9.5
10
10.5
11
11.5
+25C
+85C
-40C
N
O
IS
E
F
IG
U
R
E
(d
B
)
FREQUENCY (GHz)
HMC608LC4
GaAs pHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
v01.0707
25
27
29
31
33
35
4.5
5
5.5
Gain
P1dB
Psat
IP3
G
A
IN
(d
B
),
P
1d
B
(d
B
m
),
Psat
(dBm),
IP3(dBm)
Vdd Supply Voltage (Vdc)
Power Dissipation
1
1.5
2
2.5
3
3.5
4
-30
-25
-20
-15
-10
-5
0
9 GHz
9.5 GHz
10 GHz
10.5 GHz
11.0 GHz
11.5 GHz
P
O
W
E
R
D
IS
S
IP
A
T
IO
N
(W
)
INPUT POWER (dBm)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC608LC4_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz |
| HMC609 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER |
| HMC609_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz |
| HMC609LC4 | 制造商:Hittite Microwave Corp 功能描述:IC MMIC LNA GAAS 24SMD |
| HMC609LC4_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz |
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