- 您现在的位置：买卖IC网 > PDF目录67101 > HMC606 (HITTITE MICROWAVE CORP) 2000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER PDF资料下载
参数资料
| 型号： | HMC606 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 2.80 X 1.73 MM, 0.10 MM HEIGHT, PLASTIC, DIE-4 |
| 文件页数： | 4/6页 |
| 文件大小： | 317K |
| 代理商： | HMC606 |
L
O
W
N
O
IS
E
A
M
P
L
IF
IE
RS
-
C
H
IP
1
1 - 105
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
Vdd1= Vdd2= 5V
7V
RF Input Power (RFIN)
+15 dBm
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 14.6 mW/°C above 85 °C)
1.32 W
Thermal Resistance
(channel to die bottom)
68.37 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Vcc1= Vcc2 (V)
Icc1 + Icc2 (mA)
+4.5
53
+5.0
64
+5.5
74
Typical Supply Current vs. Vcc1, Vcc2
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC606
v02.0109
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
相关PDF资料 |
PDF描述 |
|---|---|
| HMC637LP5 | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC637LP5E | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC639ST89E | 200 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC685LP4E | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| HMC685LP4 | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC606_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz |
| HMC606LC5 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz |
| HMC606LC5_08 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz |
| HMC606LC5TR | 制造商:Hittite Microwave Corp 功能描述:IC AMP LOW PHASE NOISE 32SMD |
| HMC606-SX | 功能描述:RF Amplifier IC Radar 2GHz ~ 18GHz Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:有效 频率:2GHz ~ 18GHz P1dB:13dBm 增益:13dB 噪声系数:6.5dB RF 类型:雷达 电压 - 电源:5V 电流 - 电源:64mA 测试频率:12GHz ~ 18GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
发布紧急采购，3分钟左右您将得到回复。