- 您现在的位置：买卖IC网 > PDF目录67101 > HMC637LP5E (HITTITE MICROWAVE CORP) 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER PDF资料下载
参数资料
| 型号： | HMC637LP5E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 5 X 5 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-32 |
| 文件页数： | 1/8页 |
| 文件大小： | 619K |
| 代理商： | HMC637LP5E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 1
A
m
p
li
f
ie
r
s
-
li
n
e
A
r
&
p
o
w
e
r
-
s
m
T
HMC637LP5 / 637LP5E
v02.0709
General Description
Features
Functional Diagram
Typical Applications
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
The HmC637lp5(e) is a GaAs mmiC mesfeT
Distributed power Amplifier which operates bet-
ween DC and 6 GHz. The amplifier provides 13 dB
of gain, +40 dBm output ip3 and +29 dBm of output
power at 1 dB gain compression while requiring 400
mA from a +12V supply. Gain flatness is excellent at
±0.75 dB from DC - 6 GHz making the HmC637lp5(e)
ideal for ew, eCm, radar and test equipment
applications. The HmC637lp5(e) amplifier i/os
are internally matched to 50 ohms and the 5x5 mm
Qfn package is compatible with high volume smT
assembly equipment.
p1dB output power: +29 dBm
Gain: 13 dB
output ip3: +40 dBm
50 ohm matched input/output
32 lead 5x5mm lead smT package: 25mm2
The HmC637lp5(e) wideband pA is ideal for:
Telecom infrastructure
microwave radio & VsAT
military & space
Test instrumentation
fiber optics
Electrical Specifications, T
A = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 400 mA*
parameter
min.
Typ.
max.
Units
frequency range
DC - 6
GHz
Gain
12
13
dB
Gain flatness
±0.75
dB
Gain Variation over Temperature
0.025
dB/ °C
input return loss
12
dB
output return loss
15
dB
output power for 1 dB Compression (p1dB)
27
29
dBm
saturated output power (psat)
29.5
dBm
output Third order intercept (ip3)
40
dBm
noise figure
5
dB
supply Current (idd)
320
400
480
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical.
相关PDF资料 |
PDF描述 |
|---|---|
| HMC639ST89E | 200 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC685LP4E | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| HMC685LP4 | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| HMC709LC5 | 11000 MHz - 17000 MHz RF/MICROWAVE UP CONVERTER |
| HMC719LP4E | 1300 MHz - 2900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC639ST89E | 制造商:Hittite Microwave Corp 功能描述:IC AMP GBA LNA HI IP3 SOT-89 |
| HMC639ST89ETR | 制造商:Hittite Microwave Corp 功能描述:IC AMP GBA LNA HI IP3 SOT-89 |
| HMC641 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz |
| HMC641A | 功能描述:IC SW SP4T NON-REFL DIE 制造商:analog devices inc. 系列:* 零件状态:有效 标准包装:25 |
| HMC641ALC4 | 功能描述:RF Switch IC VSAT SP4T 20GHz 50 Ohm 24-SMT (4x4) 制造商:analog devices inc. 系列:- 包装:剪带 零件状态:有效 频率?- 下:0Hz 频率?- 上:20GHz 隔离 @ 频率:40dB @ 20GHz（标准） 插损 @ 频率:2.3dB @ 20GHz IIP3:41dBm（标准） 拓扑:吸收性 电路:SP4T P1dB:25dBm 特性:- 阻抗:50 欧姆 工作温度:-40°C ~ 85°C 电压 - 电源:- RF 类型:VSAT 封装/外壳:24-TFQFN 裸露焊盘 供应商器件封装:24-SMT（4x4） 标准包装:1 |
发布紧急采购，3分钟左右您将得到回复。