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参数资料
| 型号： | HMC637LP5E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 5 X 5 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-32 |
| 文件页数： | 6/8页 |
| 文件大小： | 619K |
| 代理商： | HMC637LP5E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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Pin Descriptions
HMC637LP5 / 637LP5E
v02.0709
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
pin number
function
Description
interface schematic
1, 3, 4, 6 - 12,
14, 17, 18, 19,
20, 22 - 28,
31, 32
n/C
no connection. These pins may be connected to rf
ground. performance will not be affected.
2
Vgg2
Gate Control 2 for amplifier. +5V should be applied to
Vgg2 for nominal operation. Attach bypass capacitor
per application circuit herein.
5
rfin
This pad is DC coupled
and matched to 50 ohms.
13
Vgg1
Gate Control 1 for amplifier. Attach bypass capacitor
per application circuit herein. please follow “mmiC
Amplifier Biasing procedure” Application note.
15
ACG4
low frequency termination. Attach bypass capacitor
per application circuit herein.
16
ACG3
21
rfoUT & Vdd
rf output for amplifier. Connect the DC
bias (Vdd) network to provide drain current (idd).
see application circuit herein.
29
ACG2
low frequency termination. Attach bypass capacitor
per application circuit herein.
30
ACG1
Ground
paddle
GnD
Ground paddle must be connected to rf/DC ground.
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