参数资料
型号: HMC637LP5E
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: 5 X 5 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-32
文件页数: 3/8页
文件大小: 619K
代理商: HMC637LP5E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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m
p
li
f
ie
r
s
-
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n
e
A
r
&
p
o
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e
r
-
s
m
T
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power & Output IP3 vs.
Supply Voltage @ 3 GHz, Fixed Vgg
HMC637LP5 / 637LP5E
v02.0709
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
20
22
24
26
28
30
32
0
2
4
6
8
+25C
+85C
-40C
Psat
(dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
0
2
4
6
8
+25C
+85C
-40C
P1dB
(dBm)
FREQUENCY (GHz)
10
15
20
25
30
35
40
45
11.5
12
12.5
Gain
P1dB
Psat
IP3
G
ai
n
(d
B
),
P
1d
B
(d
B
m
),
Psat
(dBm),
IP3
(dBm)
Vdd (V)
20
25
30
35
40
45
50
55
60
0
2
4
6
8
+25C
+85C
-40C
IP3
(dBm
)
FREQUENCY (GHz)
Gain & Return Loss vs. Frequency,
Log Scale
Output IP3 vs. Temperature,
Log Scale
-30
-20
-10
0
10
20
0.01
0.1
1
10
S21
S11
S22
R
E
S
P
O
N
S
E
(d
B
)
FREQUENCY (GHz)
20
25
30
35
40
45
50
55
60
0.01
0.1
1
10
+25C
+85C
-40C
IP3
(dBm
)
FREQUENCY (GHz)
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