参数资料
型号: HMC608
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 9500 MHz - 11500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: 2.10 X 1.20 MM, 0.10 MM HEIGHT, DIE-9
文件页数: 5/8页
文件大小: 292K
代理商: HMC608
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
7 Vdc
Gate Bias Voltage (Vgg)
-4.0 to -1.0 Vdc
RF Input Power (RFIN)(Vdd = +5.0 Vdc)
+10 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 25.89 mW/°C above 85 °C)
2.33W
Thermal Resistance
(channel to die bottom)
38.6 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Vdd (Vdc)
Idd (mA)
+4.5
300
+5.0
310
+5.5
325
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd= 310 mA at +5.0V.
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC608
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
v01.0707
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
Die Packaging Information [1]
Standard
Alternate
GP-2
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
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