- 您现在的位置：买卖IC网 > PDF目录65470 > HMC609 (HITTITE MICROWAVE CORP) 2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER PDF资料下载
参数资料
| 型号： | HMC609 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 2.10 X 1.30 MM, 0.10 MM HEIGHT, DIE-10 |
| 文件页数： | 1/6页 |
| 文件大小： | 242K |
| 代理商： | HMC609 |
A
M
P
L
IF
IE
R
S
-
L
O
W
NO
IS
E
-
C
H
IP
1
1 - 108
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC609
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
General Description
Features
Functional Diagram
The HMC609 is a GaAs PHEMT MMIC Low Noise
Amplifier (LNA) chip which operates from 2 to 4 GHz.
The HMC609 features extremely flat performance
characteristics including 20 dB of small signal gain,
3.0 dB of noise figure and output IP3 of +36 dBm
across the operating band. This versatile LNA is ideal
for hybrid and MCM assemblies due to its compact
size, consistent output power and DC blocked RF I/
O’s. All data is measured with the chip in a 50 Ohm test
fixture connected via two 0.025 mm (1 mil) diameter
bondwires of minimal length 0.31 mm (12 mil).
Excellent Gain Flatness: ±0.2 dB
High Gain: 20.5 dB
Low Noise Figure: 3 dB
Output IP3: +36 dBm
Output P1dB: +22 dBm
50 Ohm Matched Input/Output
Die Size: 2.1 x 1.3 x 0.1 mm
Electrical Specifications, T
A = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170 mA *
Typical Applications
The HMC609 is ideal for:
Fixed Microwave
Point-to-Multi-Point Radios
Test & Measurement Equipment
Radar & Sensors
Military & Space
Parameter
Min.
Typ.
Max.
Units
Frequency Range
2 - 4
GHz
Gain
19
20.5
dB
Gain Variation Over Temperature
0.005
0.01
dB/ °C
Noise Figure
34
dB
Input Return Loss
20
dB
Output Return Loss
17
dB
Output Power for 1 dB
Compression (P1dB)
18
21
dBm
Saturated Output Power (Psat)
22
dBm
Output Third Order Intercept (IP3)
36
dBm
Supply Current (Idd1 + Idd2)
170
220
mA
*Adjust Vgg1 = Vgg2 between -1.5V to -0.5V (typ. -0.9V) to achieve total drain bias of 170mA
v03.0210
相关PDF资料 |
PDF描述 |
|---|---|
| HMC611LP4E | 1 MHz - 10000 MHz RF/MICROWAVE THRESHOLD DETECTOR, 15 dBm INPUT POWER-MAX |
| HMC611LP4 | 1 MHz - 10000 MHz RF/MICROWAVE THRESHOLD DETECTOR, 15 dBm INPUT POWER-MAX |
| HMC616LP3E | 175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC616LP3 | 175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC617LP3E | 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC609_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz |
| HMC609LC4 | 制造商:Hittite Microwave Corp 功能描述:IC MMIC LNA GAAS 24SMD |
| HMC609LC4_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz |
| HMC609-SX | 功能描述:IC MMIC LNA GAAS DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:2GHz ~ 4GHz P1dB:21dBm 增益:20.5dB 噪声系数:3dB RF 类型:雷达 电压 - 电源:6V 电流 - 电源:170mA 测试频率:2GHz ~ 4GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC60DRAH | 功能描述:CONN EDGECARD 120PS R/A .100 SLD RoHS:是 类别:连接器，互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:36 位置数:72 卡厚度:0.062"（1.57mm） 行数:2 间距:0.100"（2.54mm） 特点:- 安装类型:面板安装 端子:焊接孔眼 触点材料:磷青铜 触点表面涂层:金 触点涂层厚度:10µin（0.25µm） 触点类型：:全波纹管 颜色:蓝 包装:管件 法兰特点:顶部安装开口，螺纹插件，4-40 材料 - 绝缘体:聚对苯二甲酸丁二酯（PBT） 工作温度:-65°C ~ 125°C 读数:双 |
发布紧急采购，3分钟左右您将得到回复。