参数资料
型号: HMC609
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 2.10 X 1.30 MM, 0.10 MM HEIGHT, DIE-10
文件页数: 4/6页
文件大小: 242K
代理商: HMC609
A
M
P
L
IF
IE
R
S
-
L
O
W
NO
IS
E
-
C
H
IP
1
1 - 111
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
7 Vdc
RF Input Power (RFIN)(Vdd = +5 Vdc)
+15 dBm
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 18 mW/°C above 85 °C)
1.64 W
Thermal Resistance
(channel to ground pad)
55 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Vdd (V)
Idd (mA)
+5.5
160
+6.0
170
+6.5
180
Note: Amplifier will operate over full voltage range shown above
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
HMC609
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.007”
3. TYPICAL BOND PAD IS 0.004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BACKSIDE METAL IS GROUND
6. BOND PAD METALIZATION: GOLD
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE ±0.002”
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
v03.0210
相关PDF资料
PDF描述
HMC611LP4E 1 MHz - 10000 MHz RF/MICROWAVE THRESHOLD DETECTOR, 15 dBm INPUT POWER-MAX
HMC611LP4 1 MHz - 10000 MHz RF/MICROWAVE THRESHOLD DETECTOR, 15 dBm INPUT POWER-MAX
HMC616LP3E 175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC616LP3 175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC617LP3E 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
相关代理商/技术参数
参数描述
HMC609_10 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
HMC609LC4 制造商:Hittite Microwave Corp 功能描述:IC MMIC LNA GAAS 24SMD
HMC609LC4_09 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
HMC609-SX 功能描述:IC MMIC LNA GAAS DIE 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:在售 频率:2GHz ~ 4GHz P1dB:21dBm 增益:20.5dB 噪声系数:3dB RF 类型:雷达 电压 - 电源:6V 电流 - 电源:170mA 测试频率:2GHz ~ 4GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2
HMC60DRAH 功能描述:CONN EDGECARD 120PS R/A .100 SLD RoHS:是 类别:连接器,互连式 >> Card Edge 系列:- 标准包装:1 系列:- 卡类型:非指定 - 双边 类型:母头 Number of Positions/Bay/Row:36 位置数:72 卡厚度:0.062"(1.57mm) 行数:2 间距:0.100"(2.54mm) 特点:- 安装类型:面板安装 端子:焊接孔眼 触点材料:磷青铜 触点表面涂层:金 触点涂层厚度:10µin(0.25µm) 触点类型::全波纹管 颜色:蓝 包装:管件 法兰特点:顶部安装开口,螺纹插件,4-40 材料 - 绝缘体:聚对苯二甲酸丁二酯(PBT) 工作温度:-65°C ~ 125°C 读数:双