参数资料
型号: HMC616LP3E
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 3 X 3 MM, ROHS COMPLIANT, PLASTIC, QFN-16
文件页数: 1/10页
文件大小: 763K
代理商: HMC616LP3E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC616LP3 / 616LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
v02.0610
General Description
Features
Functional Diagram
low Noise figure: 0.5 dB
High Gain: 24 dB
High output ip3: +37 dBm
single supply: +3V to +5V
50 ohm matched input/output
16 lead 3x3mm QfN package: 9 mm2
Typical Applications
The HmC616lp3(e) is ideal for:
Cellular/3G and lTe/wimAX/4G
BTs & infrastructure
repeaters and femtocells
public safety radio
DAB receivers
Electrical Specifications, T
A = +25° C, Rbias = 3.92k Ohms*
parameter
Vdd = +3V
Vdd = +5V
Units
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
frequency range
175 - 230
230 - 660
175 - 230
230 - 660
mHz
Gain
20
22.5
15
20
21
24
15
21
dB
Gain Variation over Temperature
0.002
0.005
dB/ °C
Noise figure
0.5
0.8
0.5
0.8
0.5
0.8
0.5
0.8
dB
input return loss
10
16
12
14
dB
output return loss
9
10
9
10
dB
output power for 1 dB
Compression (p1dB)
8
11
10
15
11
15
14
19
dBm
saturated output power (psat)
8.5
13
11
15.5
12.5
17.5
15.5
19.5
dBm
output Third order intercept (ip3)
20
30
32
37
dBm
supply Current (idd)
30
45
30
45
90
115
90
115
mA
* rbias resistor sets current, see application circuit herein
The HmC616lp3(e) is a GaAs pHemT mmiC
low Noise Amplifier that is ideal for Cellular/3G and
lTe/wimAX/4G
basestation
front-end
receivers
operating between 175 and 660 mHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
24 dB gain and +37 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HmC616lp3(e) shares
the same package and pinout with the HmC617-
lp3(e) and HmC618lp3(e) lNAs. The HmC616lp3(e)
can be biased with +3V to +5V and features an
externally adjustable supply current which allows
the designer to tailor the linearity performance of the
lNA for each application. The HmC616lp3(e) offers
improved noise figure versus the previously released
HmC356lp3(e).
相关PDF资料
PDF描述
HMC616LP3 175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC617LP3E 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
HMC617LP3 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
HMC624LP4 0 MHz - 6000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3.8 dB INSERTION LOSS-MAX
HMC627LP5 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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