参数资料
型号: HMC616LP3E
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 3 X 3 MM, ROHS COMPLIANT, PLASTIC, QFN-16
文件页数: 4/10页
文件大小: 763K
代理商: HMC616LP3E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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7
7 - 3
P1dB vs. Temperature
Psat vs. Temperature
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Output IP3 and Supply Current vs.
Supply Voltage @ 400 MHz
[1] measurement reference plane shown on evaluation pCB drawing.
Output IP3 vs. Temperature
Noise Figure vs. Temperature [1]
Output IP3 and Supply Current vs.
Supply Voltage @ 500 MHz
26
28
30
32
34
36
38
40
0
20
40
60
80
100
120
140
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
IP3
(dBm
)
Idd
(mA)
VOLTAGE SUPPLY (V)
26
28
30
32
34
36
38
40
0
20
40
60
80
100
120
140
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
IP3
(dBm
)
Idd
(mA)
VOLTAGE SUPPLY (V)
24
28
32
36
40
0.2
0.3
0.4
0.5
0.6
0.7
+25 C
+85 C
- 40 C
IP3
(dBm
)
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
10
12
14
16
18
20
22
24
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25 C
+85 C
- 40 C
Psat
(dBm)
FREQUENCY (GHz)
Vdd=3V
Vdd=5V
10
12
14
16
18
20
22
24
0.2 0.25
0.3 0.35 0.4 0.45
0.5 0.55 0.6
0.65 0.7
+25 C
+85 C
- 40 C
P1dB
(dBm)
FREQUENCY (GHz)
Vdd=3V
Vdd=5V
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
Vdd=5V
Vdd=3V
N
O
IS
E
F
IG
U
R
E
(d
B
)
FREQUENCY (GHz)
+85C
+25 C
-40C
相关PDF资料
PDF描述
HMC616LP3 175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC617LP3E 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
HMC617LP3 550 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
HMC624LP4 0 MHz - 6000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3.8 dB INSERTION LOSS-MAX
HMC627LP5 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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