- 您现在的位置：买卖IC网 > Datasheet目录440 > HMC625LP5E (Hittite Microwave Corporation)IC AMP VGA DGTL 5X5 Datasheet资料下载
参数资料
| 型号： | HMC625LP5E |
| 厂商： | Hittite Microwave Corporation |
| 文件页数： | 5/8页 |
| 文件大小： | 0K |
| 描述： | IC AMP VGA DGTL 5X5 |
| 标准包装： | 1 |
| 频率： | 0Hz ~ 6GHz |
| P1dB： | 16dBm |
| 增益： | 13dB |
| 噪音数据： | 6dB |
| RF 型： | 通用 |
| 电源电压： | 5V |
| 电流 - 电源： | 100mA |
| 封装/外壳： | 32-VFQFN 裸露焊盘 |
| 包装： | 标准包装 |
| 其它名称： | 1127-1062-6 |
HMC625LP5 / 625LP5E
v09.0410
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, DC - 6 GHz
Power-Up States
PUP Truth Table
If LE is set to logic LOW at power-up, the logic state of
PUP1 and PUP2 determines the power-up state of the
part per PUP truth table. If the LE is set to logic HIGH
at power-up, the logic state of D0-D5 determines the
power-up state of the part per truth table. The DVGA
latches in the desired power-up state approximately
200 ms after power-up.
LE
0
0
0
0
1
PUP1
0
1
0
1
X
PUP2
0
0
1
1
X
Gain Relative to Maximum
Gain
-31.5
-24
-16
Insertion Loss
0 to -31.5 dB
Power-On Sequence
The ideal power-up sequence is: GND, Vdd, digital
inputs, RF inputs. The relative order of the digital
Note: The logic state of D0 - D5 determines the
power-up state per truth table shown below when LE
is high at power-up.
12
inputs are not important as long as they are powered
after Vdd / GND
Absolute Maximum Ratings
Truth Table
RF Input Power [1]
11.5 dBm (T = 85 °C)
Control Voltage Input
Gain
Digital Inputs (Reset, Shift Clock,
Latch Enable & Serial Input)
Bias Voltage (Vdd)
Collector Bias Voltage (Vcc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 15.1 mW/°C above 85 °C) [1]
Thermal Resistance
Storage Temperature
Operating Temperature
[1] At max gain settling
-0.5 to Vdd +0.5V
5.6V
5.5V
150 °C
0.98 W
66.3 °C/W
-65 to +150 °C
-40 to +85 °C
D5
High
High
High
High
High
High
Low
Low
D4
High
High
High
High
High
Low
High
Low
D3
High
High
High
High
Low
High
High
Low
D2
High
High
High
Low
High
High
High
Low
D1
High
High
Low
High
High
High
High
Low
D0
High
Low
High
High
High
High
High
Low
Relative to
Maximum
Gain
0 dB
-0.5 dB
-1 dB
-2 dB
-4 dB
-8 dB
-16 dB
-31.5 dB
Any combination of the above states will provide a reduction in
gain approximately equal to the sum of the bits selected.
Bias Voltage
Control Voltage Table
Vdd (V)
5V
Vs (V)
Idd (Typ.) (mA)
2
Is (Typ.) (mA)
State
Low
High
Vdd = +3V
0 to 0.5V @ <1 μA
2 to 3V @ <1 μA
Vdd = +5V
0 to 0.8V @ <1 μA
2 to 5V @ <1 μA
5V
86
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
12 - 5
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
相关PDF资料 |
PDF描述 |
|---|---|
| HMC636ST89E | IC GAIN BLOCK AMP SOT89 |
| HMC741ST89E | IC GAIN BLOCK AMP SOT89 |
| HMC753LP4E | IC AMP MMIC GAAS LN 24QFN |
| HMC784MS8GE | IC MMIC GAAS SW SPDT 8MSOP |
| HMC788LP2E | IC GAIN BLOCK AMP 6DFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC625LP5ETR | 制造商:Hittite Microwave Corp 功能描述:IC AMP VGA DGTL 5X5 |
| HMC625LP5ETR- | 制造商:Hittite Microwave Corp 功能描述:6-Bit Digital Variable Gain Amplifier SMT, DC - 6 GHz |
| HMC626ALP5E | 功能描述:RF Amplifier IC LTE, WiMax 0Hz ~ 1GHz 32-QFN (5x5) 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:生命周期结束 频率:0Hz ~ 1GHz P1dB:20dBm 增益:35dB 噪声系数:2.8dB RF 类型:LTE，WiMax 电压 - 电源:5V 电流 - 电源:178.4mA 测试频率:500MHz ~ 1GHz 封装/外壳:32-VFQFN 裸露焊盘 供应商器件封装:32-QFN（5x5） 标准包装:1 |
| HMC626ALP5ETR | 功能描述:RF Amplifier IC LTE, WiMax 0Hz ~ 1GHz 32-QFN (5x5) 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:生命周期结束 频率:0Hz ~ 1GHz P1dB:20dBm 增益:35dB 噪声系数:2.8dB RF 类型:LTE，WiMax 电压 - 电源:5V 电流 - 电源:178.4mA 测试频率:500MHz ~ 1GHz 封装/外壳:32-VFQFN 裸露焊盘 供应商器件封装:32-QFN（5x5） 标准包装:1 |
| HMC626LP5 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 1 GHz |
发布紧急采购，3分钟左右您将得到回复。