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参数资料
| 型号： | HMC637LP5 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 5 X 5 MM, PLASTIC, SMT, QFN-32 |
| 文件页数： | 4/8页 |
| 文件大小： | 619K |
| 代理商： | HMC637LP5 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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9
9 - 4
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+14 Vdc
Gate Bias Voltage (Vgg1)
-3 to 0 Vdc
Gate Bias Voltage (Vgg2)
+4 to +7 Vdc
rf input power (rfin)(Vdd = +12 Vdc)
+25 dBm
Channel Temperature
150 °C
Continuous pdiss (T= 85 °C)
(derate 87 mw/°C above 85 °C)
5.7 w
Thermal resistance
(channel to ground paddle)
11.5 °C/w
storage Temperature
-65 to 150 °C
operating Temperature
-40 to 85 °C
Vdd (V)
idd (mA)
11.5
373
12.0
400
12.5
425
Typical Supply Current vs. Vdd
eleCTrosTATiC sensiTiVe DeViCe
oBserVe HAnDlinG preCAUTions
HMC637LP5 / 637LP5E
v02.0709
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
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