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参数资料
| 型号： | HMC637LP5 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 5 X 5 MM, PLASTIC, SMT, QFN-32 |
| 文件页数： | 8/8页 |
| 文件大小： | 619K |
| 代理商： | HMC637LP5 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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9 - 8
Evaluation PCB
The circuit board used in the application should
use rf circuit design techniques. signal lines
should have 50 ohm impedance while the package
ground leads and package bottom should be
connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
List of Materials for Evaluation PCB 108347 [1]
HMC637LP5 / 637LP5E
v02.0709
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
item
Description
J1 - J2
sri smA Connector
J3 - J4
2mm molex Header
C1, C2
100 pf Capacitor, 0402 pkg.
C3 - C6
1000 pf Capacitor, 0603 pkg.
C7 - C9
4.7 f Capacitor, Tantalum
U1
HmC637lp5 / HmC637lp5e
pCB [2]
109765 evaluation pCB
[1] reference this number when ordering complete evaluation pCB
[2] Circuit Board material: rogers 4350
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC637LP5E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC MESFET AMP GAAS 32-QFN |
| HMC639ST89E | 制造商:Hittite Microwave Corp 功能描述:IC AMP GBA LNA HI IP3 SOT-89 |
| HMC639ST89ETR | 制造商:Hittite Microwave Corp 功能描述:IC AMP GBA LNA HI IP3 SOT-89 |
| HMC641 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 18 GHz |
| HMC641A | 功能描述:IC SW SP4T NON-REFL DIE 制造商:analog devices inc. 系列:* 零件状态:有效 标准包装:25 |
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