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参数资料
| 型号： | HMC816LP4E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 230 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-24 |
| 文件页数： | 5/8页 |
| 文件大小： | 868K |
| 代理商： | HMC816LP4E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC816LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Cross Channel Isolation [1]
Output IP3 vs. Rbias @ 400 MHz
Magnitude Balance [1]
Output IP3 vs. Rbias @ 500 MHz
Phase Balance [1]
[1] Vdd = 5V
-1
-0.5
0
0.5
1
0.2
0.3
0.4
0.5
0.6
0.7
A
M
P
LI
T
U
D
E
B
A
LA
N
C
E
(d
B
)
FREQUENCY (GHz)
22
24
26
28
30
32
34
36
38
40
1000
10000
Vdd= 3V
Vdd= 5V
IP3
(dBm
)
Rbias (Ohms)
500
-40
-30
-20
-10
0
0.2
0.3
0.4
0.5
0.6
0.7
RFIN1 TO RFOUT2
RFIN2 TO RFOUT1
IS
O
LA
T
IO
N
(d
B
)
FREQUENCY (GHz)
22
24
26
28
30
32
34
36
38
40
1000
10000
Vdd= 3V
Vdd= 5V
IP3
(dBm
)
Rbias (Ohms)
500
-2
-1
0
1
2
0.2
0.3
0.4
0.5
0.6
0.7
P
H
A
S
E
B
A
LA
N
C
E
(d
eg
re
es
)
FREQUENCY (GHz)
Absolute Bias Register for Idd
Range & Recommended Bias Resistor
Vdd (V)
rbias
idd (mA)
min
max
recommended
3V
4.7k
open
circuit
10k
34
5V
0
open
circuit
820
65
2k
80
3.92k
90
10k
97
With Vdd = 3V Rbias <4.7k is not recommended and may result in
LNA becoming conditionally unstable.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC816LP4E_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz |
| HMC817LP4E | 制造商:Hittite Microwave Corp 功能描述:IC AMP LNA DUAL PHEMT 24-QFN |
| HMC817LP4E_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz |
| HMC818LP4E | 制造商:Hittite Microwave Corp 功能描述:IC AMP LNA DUAL PHEMT 24-QFN |
| HMC818LP4E_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz |
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