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参数资料
| 型号： | HMC816LP4E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 230 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-24 |
| 文件页数： | 7/8页 |
| 文件大小： | 868K |
| 代理商： | HMC816LP4E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC816LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
pin Number
function
Description
interface schematic
1, 6
rfiN1, rfiN2
This pins are DC coupled. An off-chip DC blocking capacitor is required.
2, 5, 7, 12, 14,
17, 19, 24
GND
These pins and package bottom must be connected to rf/DC ground.
3, 4, 8 - 10,
21 - 23
N/C
No connection required. These pins may be connected
to rf/DC ground without affecting performance.
18, 13
rfoUT1,
rfoUT2
These pins are matched to 50 ohms.
15, 16
res1, res2
These pins are used to set the DC current of each amplifier via external
bias resistor. see application circuit.
20, 11
Vdd1, Vdd2
power supply Voltages for each amplifier. Choke inductor and bypass
capacitors are required. see application circuit.
Pin Descriptions
Application Circuit
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC816LP4E_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz |
| HMC817LP4E | 制造商:Hittite Microwave Corp 功能描述:IC AMP LNA DUAL PHEMT 24-QFN |
| HMC817LP4E_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz |
| HMC818LP4E | 制造商:Hittite Microwave Corp 功能描述:IC AMP LNA DUAL PHEMT 24-QFN |
| HMC818LP4E_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz |
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