参数资料
型号: HMJE13007
厂商: HSMC CORP.
英文描述: NPN EPITAXIAL PLANAR TRANSISTOR
中文描述: 瑞展晶体管
文件页数: 2/4页
文件大小: 39K
代理商: HMJE13007
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200207
Issued Date : 1993.04.12
Revised Date : 2002.08.14
Page No. : 2/4
HMJE13007
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
1
10
100
1
10
100
1000
10000
Collector Current-I
C
(mA)
h
hFE @ VCE=5V
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
V
CE(sat)
@ I
B
=5I
B
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
V
CE(sat)
@ I
C
=4I
B
25
o
C
125
o
C
75
o
C
Saturation Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
V
BE(sat)
@ I
C
=5I
B
125
o
C
75
o
C
25
o
C
Switchange Time & Collector Current
0.1
1
10
0.1
1
10
Collector Current-I
C
(A)
S
Ton
Tstg
Tf
V
CC
=125V, I
C
=5I
B1
, I
C
=2I
B2
Collector Output Capacitance
1
10
100
1000
0.1
1
10
100
Collector Base Voltage (V)
C
Cob
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