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参数资料
| 型号： | HMJE13009A |
| 厂商： | HSMC CORP. |
| 英文描述： | 12 AMPERE NPN SILICON POWER TRANSISTOR |
| 中文描述： | 12安培NPN硅功率晶体管 |
| 文件页数： | 2/6页 |
| 文件大小： | 68K |
| 代理商： | HMJE13009A |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2006.07.04
Page No. : 2/6
HMJE13009A
HSMC Product Specification
Electrical Characteristics
(T
A
=25
°
C unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Off Characteristics
Collector-Emitter Sustaining Voltage
(I
C
=10mA, I
B
=0)
Collector Cutoff Current
(V
CEV
=Rated Value, V
BE(off)
=1.5Vdc
(V
CEV
=Rated Value, V
BE(off)
=1.5Vdc, T
C
=100
°
C)
Emitter Cutoff Current (V
EB
=9Vdc, I
C
=0)
V
CEO(sus)
400
-
-
Vdc
I
CEV
-
-
-
-
1
5
mAdc
I
EBO
-
-
1
mAdc
Second Breakdown
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with Base Reverse Biased
Is/b
See Figure 1
See Figure 2
On Characteristics
DC Current Gain (I
C
=0.5Adc, V
CE
=5Vdc)
DC Current Gain (I
C
=5Adc, V
CE
=5Vdc)
DC Current Gain (I
C
=8Adc, V
CE
=5Vdc)
DC Current Gain (I
C
=12Adc, V
CE
=5Vdc)
Collector-Emitter Saturation Voltage
(I
C
=5Adc, I
B
=1Adc)
(I
C
=8Adc, I
B
=1.6Adc)
(I
C
=12Adc, I
B
=3Adc)
(I
C
=8Adc, I
B
=1.6Adc, T
C
=100
°
C)
Base-Emitter Saturation Voltage
(I
C
=5Adc, I
B
=1Adc)
(I
C
=8Adc, I
B
=1.6Adc)
(I
C
=8Adc, I
B
=1.6Adc, T
C
=100
°
C)
*h
FE1
*h
FE2
*h
FE3
*h
FE4
15
13
8
5
-
-
-
-
-
22
-
-
*V
CE(sat)1
*V
CE(sat)2
*V
CE(sat)3
*V
CE(sat)4
-
-
-
-
-
-
-
-
1
1.5
3
2
Vdc
*V
BE(sat)1
*V
BE(sat)2
*V
BE(sat)3
-
-
-
-
-
-
1.3
1.6
1.5
Vdc
Dynamic Characteristics
Current Gain Bandwidth Product
(I
C
=500mAdc, V
CE
=10Vdc, f=1MHz)
Output Capacitance
(V
CB
=10Vdc, I
E
=0, f=0.1MHz)
f
T
4
-
-
MHz
Cob
-
180
-
pF
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
-
-
-
-
0.06
0.45
1.3
0.2
0.1
1
3
0.7
uS
uS
uS
uS
(V
CC
=125Vdc, I
C
=8A)
I
B1
=I
B2
=1.6A, tp=25uS
Duty Cycle
≤
1%
Inductive Load, Clamped
Voltage Storage Time
Crossover Time
tsv
tc
-
-
0.92
0.12
2.3
0.7
uS
uS
(I
C
=8Adc, V
clamp
=300Vdc)
(I
B1
=1.6Adc,V
BE(off)
=5Vdc, T
C
=100
°
C)
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
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