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参数资料
| 型号： | HMMC-5021 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.1173 X 0.0303 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件页数： | 2/7页 |
| 文件大小： | 633K |
| 代理商： | HMMC-5021 |
2
DC Specications/Physical Properties1 (Applies to all part numbers)
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
IDSS
Saturated Drain Current
115
180
250
mA
(VDD = 7.0 V, VG1 = 0.0 V, VG2 = open circuit)
Vp
First Gate Pinch-Off Voltage
(VDD = 7.0 V, IDD = 16 mA, VG2 = open circuit) -3.5
-1.5
-0.5
volts
VG2
Second Gate Self-Bias Voltage
(VDD = 7.0 V, VG1 = 0.0 V)
2.1
volts
IDSOFF
First Gate Pinch-Off Current
(VG1)
(VDD = 7.0 V, VG1 = -3.5 V, VG2= open circuit)
4
mA
IDSOFF
Second Gate Pinch-Off Current
(VG2)
(VDD = 5.0 V, VG1 = 0.0 V, VG2 = -3.5 V)
8
mA
θch-bs
Thermal Resistance (Tbackside = 25°C)
36
°C/W
1 Measured in wafer form with T
chuck = 25°C. (Except θch-bs).
RF Specications
(VDD = 7.0 V, IDD(Q) = 150 mA, Zin = Zo = 50 )
1
2.0-22.0 GHz
2.0-26.5 GHz
Symbol
Parameters/Conditions
Typ.
HMMC-5022
Typ.
HMMC-5026
Units
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
BW
Guaranteed Bandwidth2
2
22
2
22
2
24
26.5
2
26.5
GHz
S21
Small Signal Gain
10
8
12
9.5
7
12
8
12
dB
S21
Small Signal Gain Flatness
±0.5
±1
±0.75
±1.5
±1
dB
RLin(min)
Minimum Input Return Loss
16
15
14
12
dB
RLout(min) Minimum Output Return Loss
13
10
12
dB
Isolation
Minimum Reverse Isolation
32
23
30
23
25
dB
P–1 dB
Output Power at 1 dB Gain
18
15
12
dBm
Compression
Psat
Saturated Output Power
20
17
14
18
14
dBm
H2(max)
Max. Second Harm. (2 <o<20),
-25
-20
-25
-20
dBc
[Po(o) = 17 dBm or P–1dB,
whichever is less]
H3(max)
Max. Third Harm. (2 <o<20),
-34
-20
-34
-20
dBc
[Po(o) = 17 dBm or P–1dB,
whichever is less]
NF
Noise Figure
8
10
dB
1 Small-signal data measured in wafer form with Tchuck = 25°C. Large-signal data measured on individual devices mounted in an
Agilent 83040 Series Modular Microcircuit Package @ TA = 25°C.
2 Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry. Upper -3 dB corner frequency ~29.5 GHz.
相关PDF资料 |
PDF描述 |
|---|---|
| HMMC-5027 | 2000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5034 | 37000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMMC-5034 | 37000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMMC-5040 | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5220 | 0 MHz - 15000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMMC-5022 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 22GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film 制造商:Agilent Technologies 功能描述:ML-GAAS ATTEN CHIP |
| HMMC-5023 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5025 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 50GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5026 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 8V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5027 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 26.5GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
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