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参数资料
| 型号： | HMMC-5021 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 放大器 |
| 英文描述： | 2000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 0.1173 X 0.0303 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件页数： | 3/7页 |
| 文件大小： | 633K |
| 代理商： | HMMC-5021 |
3
Applications
The HMMC-5021/22/26 series of trav-
eling wave ampliers are designed for
use as general purpose wideband gain
blocks in communication systems and
microwave instrumentation. They are
ideally suited for broadband applica-
tions requiring a at gain response and
excellent port matches over a 2 to 26.5
GHz frequency range. Dynamic gain
control and low-frequency extension
capabilities are designed into these
devices.
It is characteristic of traveling wave
ampliers that S22 tends
to 0 dB and greater out of band. This
is the design trade-off for the broad-
band performance of TWAs. As a
consequence, TWAs are not necessar-
ily unconditionally stable out of band.
This means that if a TWA is followed
by a reective low-pass lter, oscilla-
tions can occur. This
phenomenon is exacerbated by low
temperature where the gain is higher.
More data will follow on individual
devices.
Biasing and Operation
These ampliers are biased with
a single positive drain supply (VDD)
and a single negative
gate supply (VG1). The recommend-
ed bias conditions for
the HMMC-5021/22/26 are
VDD = 7.0 V, IDD = 150 mA for
best overall performance. To achieve
this drain current level, VG1 is typically
biased between -0.2 V and -0.5 V. No
other bias supplies or connections to
the device are required for
2 to 26.5 GHz operation.
See Figure 3 for assembly
information.
The auxiliary gate and drain
contacts are used only for
low-frequency performance
extension below ≈ 1.0 GHz.
When used, these contacts must
be AC coupled only. (Do not attempt to
apply bias to these pads.)
The second gate (VG2) can be used
to obtain 35 dB (typical) dynamic gain
control.
For normal operation, no external bias
is required on this
contact and its self-bias voltage is
≈ +2.1 V. Applying an external bias
between its open-circuit
voltage and -2.5 volts will adjust the
gain while maintaining a good input/
output port match.
Assembly Techniques
Solder die-attach using a uxless
AuSu solder preform is the
recommended assembly method. Gold
thermosonic wedge bonding with 0.7
mil diameter Au wire is recommended
for all bonds. Tool force should be 22
±1 gram, stage temperature should be
150 ±2°C, and ultrasonic power and
duration should be 64 ±1 dB and
76 ±8 msec, respectively. The bonding
pad and chip backside metallization is
gold.
GaAs MMICs are ESD sensitive.
ESD preventive measures must be
employed in all aspects of storage,
handling, and assembly.
MMIC ESD precautions, handling
considerations, die attach and bonding
methods are critical factors in suc-
cessful GaAs MMIC performance and
reliability.
Agilent application note #54, “GaAs
MMIC ESD, Die Attach
and Bonding Guidelines” provides
basic information on
these subjects.
Additional References:
AN# 31, “2–26.5 GHz Variable Gain
Amplier Using and GaAs MMIC Com-
ponents,” AN# 34, “TWA Environmen-
tal Data,”
AN# 41, “ S–Parameters
Performance as a Function
of Bonding Conguration,”
and AN# 56, “GaAs MMIC
TWA Users Guide.”
Drain Bias
(VDD)
First Gate
Bias (VG1)
Second Gate
Bias (VG2)
Notes:
FET gate periphery in microns.
Aux Gate
Single Stage Force
Seven Identical Stages
Aux Drain
RF Input
Temp
Diode
Sense
124
Temp
Diode
Force
RF Output
Figure 1. Schematic
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