参数资料
型号: HUF75631P3
厂商: Fairchild Semiconductor
文件页数: 5/10页
文件大小: 0K
描述: MOSFET N-CH 100V 33A TO-220AB
标准包装: 400
系列: UltraFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 33A
开态Rds(最大)@ Id, Vgs @ 25° C: 40 毫欧 @ 33A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 79nC @ 20V
输入电容 (Ciss) @ Vds: 1220pF @ 25V
功率 - 最大: 120W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
HUF75631S3S
Typical Performance Curves
(Continued)
1.2
1.1
I D = 250 μ A
4000
1000
V GS = 0V, f = 1MHz
C ISS = C GS + C GD
C OSS ? C DS + C GD
1.0
100
C RSS = C GD
0.9
-80
-40
0
40
80
120
160
200
20
0.1
1.0
10
100
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE
10
V DD = 50V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2
I D = 33A
I D = 17A
0
0
10
20
30
40
Q g , GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
?2001 Fairchild Semiconductor Corporation
HUF75631S3S Rev. C0
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