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参数资料
| 型号： | HUF75631P3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 33A TO-220AB |
| 标准包装： | 400 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 33A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 33A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 79nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 1220pF @ 25V |
| 功率 - 最大： | 120W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
HUF75631S3S
PSPICE Electrical Model
.SUBCKT HUF75631 2 1 3 ;
rev 19 July 1999
CA 12 8 1.95e-9
CB 15 14 1.90e-9
CIN 6 8 1.12e-9
LDRAIN
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
10
DPLCAP
5
RSLC1
RLDRAIN
DRAIN
2
51
DBREAK
EBREAK 11 7 17 18 112.8
EDS 14 8 5 8 1
RSLC2
5
51
ESLC
11
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LGATE
-
ESG
+
EVTEMP
6
8
EVTHRES
+ 19 -
8
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
DBODY
LDRAIN 2 5 1.0e-9
LGATE 1 9 6.19e-9
LSOURCE 3 7 2.18e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
GATE
1
RLGATE
RGATE +
9 20
18 -
22
6
CIN
MSTRO
8
MMED
RSOURCE
7
LSOURCE
RLSOURCE
SOURCE
3
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.00e-2
RGATE 9 20 1.77
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
RLDRAIN 2 5 10
RLGATE 1 9 26
RLSOURCE 3 7 11
RSLC1 5 51 RSLCMOD 1e-6
CA
S1B
13
+
S2B
CB
+
14
IT
RVTEMP
19
-
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 6.5e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
EGS
-
6
8
EDS
-
5
8
8
+
22
VBAT
RVTHRES
S1A
S1B
S2A
S2B
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*71),3.5))}
.MODEL DBODYMOD D (IS = 1.20e-12 RS = 4.2e-3 XTI = 5 TRS1 = 1.3e-3 TRS2 = 8.0e-6 CJO = 1.50e-9 TT = 7.47e-8 M = 0.63)
.MODEL DBREAKMOD D (RS = 4.2e- 1TRS1 = 8e- 4TRS2 = 3e-6)
.MODEL DPLCAPMOD D (CJO = 1.45e- 9IS = 1e-3 0M = 0.82)
.MODEL MMEDMOD NMOS (VTO = 3.11 KP = 5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.77)
.MODEL MSTROMOD NMOS (VTO = 3.57 KP = 33.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.68 KP = 0.09 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 17.7 )
.MODEL RBREAKMOD RES (TC1 =1.05e- 3TC2 = -5e-7)
.MODEL RDRAINMOD RES (TC1 = 9.40e-3 TC2 = 2.93e-5)
.MODEL RSLCMOD RES (TC1 = 3.5e-3 TC2 = 2.0e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.8e-3 TC2 = -8.6e-6)
.MODEL RVTEMPMOD RES (TC1 = -3.0e- 3TC2 =1.5e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -6.2 VOFF= -3.1)
VON = -3.1 VOFF= -6.2)
VON = -1.0 VOFF= 0.5)
VON = 0.5 VOFF= -1.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
?2001 Fairchild Semiconductor Corporation
HUF75631S3S Rev. C0
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| HUF75631S3S | 功能描述:MOSFET 100V NCh PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75631S3ST | 功能描述:MOSFET 100V NCh PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75631SK8 | 功能描述:MOSFET USE 512-FDS3682 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75631SK8T | 功能描述:MOSFET 100V NCh PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75631SK8T_NB82083 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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