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参数资料
| 型号： | HUF76629D3S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 20A DPAK |
| 标准包装： | 1,800 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 52 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1285pF @ 25V |
| 功率 - 最大： | 110W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 管件 |
HUF76629D3S
PSPICE Electrical Model
.SUBCKT HUF76629D3 2 1 3 ;
CA 12 8 2.32e-9
CB 15 14 2.32e-9
CIN 6 8 1.22e-9
rev 30 July 1999
LDRAIN
DPLCAP
5
DRAIN
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
10
RSLC1
51
DBREAK
RLDRAIN
2
RSLC2
EBREAK 11 7 17 18 117.89
EDS 14 8 5 8 1
5
51
ESLC
11
9
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 3.11e-9
GATE
1
LGATE
RLGATE
-
ESG
+
EVTEMP
RGATE + 18 -
22
20
6
8
6
EVTHRES
+ 19 -
8
50
RDRAIN
16
21
MMED
MSTRO
+
17
EBREAK 18
-
MWEAK
DBODY
LSOURCE 3 7 3.72e-9
MMED 16 6 8 8 MMEDMOD
CIN
8
7
LSOURCE
SOURCE
3
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RSOURCE
RLSOURCE
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.97e-2
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
RGATE 9 20 2.81
RLDRAIN 2 5 10
S1B
S2B
RVTEMP
RLGATE 1 9 54.2
RLSOURCE 3 7 41.6
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 6.5e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
CA
13
+
EGS
-
6
8
CB
+
EDS
-
5
8
14
8
IT
RVTHRES
19
-
VBAT
+
22
S1A
S1B
S2A
S2B
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*61),3))}
.MODEL DBODYMOD D (IS = 1.15e-12 IKF = 4.3 RS = 7.45e-3 TRS1 = 2.40e-3 TRS2 = 5.15e-7 CJO = 1.14e-9 TT = 5.86e-8 M = 0.52 XTI = 3.65)
.MODEL DBREAKMOD D (RS = 3.78e- 1TRS1 = 1e- 3TRS2 = -1e-6)
.MODEL DPLCAPMOD D (CJO = 1.37e- 9IS = 1e-3 0N = 10 M = 0.94)
.MODEL MMEDMOD NMOS (VTO = 1.84 KP = 2.6 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.81)
.MODEL MSTROMOD NMOS (VTO = 2.13 KP = 42.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.58 KP = 0.07 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 28.1 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 9.88e- 4TC2 = -5.40e-7)
.MODEL RDRAINMOD RES (TC1 = 7.85e-3 TC2 = 1.95e-5)
.MODEL RSLCMOD RES (TC1 = 4.97e-3 TC2 = 5.05e-6)
.MODEL RSOURCEMOD RES (TC1 = 1.5e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.85e-3 TC2 = -4.48e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.72e- 3TC2 = 6.00e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -5.5 VOFF= -2.2)
VON = -2.2 VOFF= -5.5)
VON = -1.1 VOFF= 0.5)
VON = 0.5 VOFF= -1.1)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
?2001 Fairchild Semiconductor Corporation
HUF76629D3S Rev. C0
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