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参数资料
| 型号： | HUFA75307T3ST |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET |
| 中文描述： | 2.6 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/9页 |
| 文件大小： | 174K |
| 代理商： | HUFA75307T3ST |
2001 Fairchild Semiconductor Corporation
HUFA75307T3ST Rev. B
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
0
50
100
150
0
TA, AMBIENT TEMPERATURE (
oC)
PO
WE
R
DI
SSI
P
A
T
IO
N
M
U
L
T
IP
L
IER
0.2
0.4
0.6
0.8
1.0
1.2
I D
,DRAIN
CURR
E
N
T
(
A
)
TA, AMBIENT TEMPERATURE (
oC)
0
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
0.5
R
θJA = 110
oC/W
0.001
0.01
0.1
1
10
10-5
10-4
10-3
10-2
10-1
100
101
102
103
Z
θJA
,NORM
AL
IZ
ED
T
H
ERM
A
L
I
M
PED
A
NCE
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Z
θJA x RθJA + TA
PDM
t1
t2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
t, RECTANGULAR PULSE DURATION (s)
R
θJA = 110
oC/W
0.01
0.1
1
10
100
110
100
200
VDS, DRAIN TO SOURCE VOLTAGE (V)
I D
,DRAIN
C
URRENT
(
A
)
TJ = MAX RATED
TA = 25
oC
100
s
10ms
1ms
VDSS(MAX) = 55V
LIMITED BY rDS(ON)
AREA MAY BE
OPERATION IN THIS
R
θJA = 110
oC/W
1
10
103
102
101
100
10-1
10-2
10-3
30
t, PULSE WIDTH (s)
I DM
,P
E
AK
CURRENT
(A
)
I
= I25
150 - TA
125
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
TA = 25
oC
R
θJA = 110
oC/W
HUFA75307T3ST
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUFA75309D3 | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75309D3S | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75309D3ST | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75309P3 | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75309T3ST | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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