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参数资料
| 型号： | HUFA75307T3ST |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET |
| 中文描述： | 2.6 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/9页 |
| 文件大小： | 174K |
| 代理商： | HUFA75307T3ST |
2001 Fairchild Semiconductor Corporation
HUFA75307T3ST Rev. B
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves (Continued)
1
10
0.01
0.1
1
10
20
I AS
,
A
V
AL
AN
CHE
CURRENT
(
A
)
tAV, TIME IN AVALANCHE (ms)
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R
≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25
oC
STARTING TJ = 150
oC
0
5
10
15
20
25
0
1
234
5
I D
,DRAIN
CUR
RE
NT
(
A
)
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 6V
VGS = 10V
VGS = 20V
PULSE DURATION = 80
s
TA = 25
oC
VGS = 5V
VGS = 7V
DUTY CYCLE = 0.5% MAX
0
5
10
15
20
25
0
1.5
3.0
4.5
6.0
7.5
I D,
DRAIN
CU
RRE
N
T
(
A
)
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
VDD = 15V
150oC
25oC
-55oC
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
NOR
M
AL
IZ
ED
DRAIN
T
O
SOURCE
TJ, JUNCTION TEMPERATURE (
oC)
ON
RESIST
ANCE
PULSE DURATION = 80
s
VGS = 10V, ID = 2.6A
DUTY CYCLE = 0.5% MAX
NORM
AL
IZ
ED
G
A
T
E
TJ, JUNCTION TEMPERATURE (
oC)
T
HRESHOL
D
V
O
L
T
A
G
E
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
VGS = VDS, ID = 250A
BREAKDO
WN
V
O
L
T
A
G
E
0.8
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
NO
RM
AL
IZ
ED
DRAIN
T
O
SOURCE
ID = 250A
HUFA75307T3ST
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUFA75309D3 | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75309D3S | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75309D3ST | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75309P3 | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75309T3ST | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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