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参数资料
| 型号： | HUFA75309D3S |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| 中文描述： | 19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件页数： | 5/10页 |
| 文件大小： | 217K |
| 代理商： | HUFA75309D3S |
2001 Fairchild Semiconductor Corporation
HUFA75309P3, HUFA75309D3, HUFA75309D3S Rev. B
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
Typical Performance Curves (Continued)
100
10-4
10-3
10-2
10-1
100
101
10-5
10
500
TC = 25
oC
I = I25
175 - TC
150
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
VGS = 10V
I DM
,P
E
AK
CURRENT
(A
)
t , PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
100
10
100
200
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
I D
,DRAIN
CURRENT
(A
)
10ms
1ms
VDSS(MAX) = 55V
TJ = MAX RATED
TC = 25
oC
100
s
LIMITED BY rDS(ON)
AREA MAY BE
OPERATION IN THIS
SINGLE PULSE
10
100
0.01
0.1
1
10
0.001
1
200
I AS
,A
V
AL
ANCH
E
CURRENT
(
A
)
tAV, TIME IN AVALANCHE (ms)
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R
≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25
oC
STARTING TJ = 150
oC
8
16
24
32
40
24
6
8
0
I D
,
DRAIN
CURRENT
(
A
)
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 6V
VGS = 20V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX, TC = 25
oC
VGS = 5V
VGS = 7V
VGS = 10V
8
16
24
32
40
24
6
8
0
I D
,DRAIN
CURRENT
(
A
)
VGS, GATE TO SOURCE VOLTAGE (V)
-55oC
25oC
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
VDD = 15V
175oC
HUFA75309P3, HUFA75309D3, HUFA75309D3S
相关PDF资料 |
PDF描述 |
|---|---|
| HUFA75309P3 | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| HUFA75309T3ST | 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET |
| HUFA75321D3 | 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs |
| HUFA75321D3S | 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs |
| HUFA75321P3 | 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HUFA75309D3ST | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75309P3 | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75309T3ST | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75321D3 | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75321D3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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