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参数资料
型号： HUFA75309D3S
厂商： FAIRCHILD SEMICONDUCTOR CORP
元件分类： JFETs
英文描述： 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
中文描述： 19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件页数： 8/10页
文件大小： 217K
代理商： HUFA75309D3S
2001 Fairchild Semiconductor Corporation
HUFA75309P3, HUFA75309D3, HUFA75309D3S Rev. B
PSPICE Electrical Model
.SUBCKT HUFA75309 2 1 3 ;
rev 30June97
CA 12 8 3.85e-10
CB 15 14 4.15e-10
CIN 6 8 3.17e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 59.22
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 2.24e-9
LSOURCE 3 7 2.09e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 9.1e-3
RGATE 9 20 1.27
RLDRAIN 2 5 10
RLGATE 1 9 22.4
RLSOURCE 3 7 20.9
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 4.0e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*43),4.5))}
.MODEL DBODYMOD D (IS = 3.0e-13 RS = 1.04e-2 TRS1 = 1.89e-3 TRS2 = 0 CJO = 5.25e-10 TT = 3.09e-8 M = 0.5)
.MODEL DBREAKMOD D (RS = 2.66e- 1TRS1 = 1.31e- 4TRS2 = 1.34e-5)
.MODEL DPLCAPMOD D (CJO = 3.8e-1 0IS = 1e-3 0N = 10 M = 0.79)
.MODEL MMEDMOD NMOS (VTO = 3.45 KP = 2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.27)
.MODEL MSTROMOD NMOS (VTO = 3.95 KP = 19 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 3.05KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 12.7 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.05e- 3TC2 = 1.21e-7)
.MODEL RDRAINMOD RES (TC1 = 3.1e-2 TC2 = 3.7e-5)
.MODEL RSLCMOD RES (TC1 = 2.71e-3 TC2 = 1.07e-5)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC = -3.31e-3 TC2 = -4.31e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.62e- 3TC2 = 1.29e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.0 VOFF= -3.0)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.0 VOFF= -6.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.9 VOFF= 4.9)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 4.9 VOFF= 1.9)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
11
7
3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
10
5
51
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
-
+
-
6
HUFA75309P3, HUFA75309D3, HUFA75309D3S
相关PDF资料
PDF描述
HUFA75309P3 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75309T3ST 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET
HUFA75321D3 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75321D3S 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75321P3 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs
相关代理商/技术参数
参数描述
HUFA75309D3ST 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75309P3 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75309T3ST 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75321D3 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75321D3S 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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