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参数资料
| 型号： | HUFA75309D3S |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| 中文描述： | 19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件页数： | 6/10页 |
| 文件大小： | 217K |
| 代理商： | HUFA75309D3S |
2001 Fairchild Semiconductor Corporation
HUFA75309P3, HUFA75309D3, HUFA75309D3S Rev. B
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves (Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
-80
0.5
NO
RM
AL
IZ
ED
DRAIN
T
O
SOURCE
TJ, JUNCTION TEMPERATURE (
oC)
ON
RESIST
ANCE
PULSE DURATION = 80
s, VGS = 10V, ID = 19A
DUTY CYCLE = 0.5% MAX
0.8
1.0
1.2
-40
0
40
80
120
160
200
-80
0.6
N
O
RMAL
IZ
E
D
GA
T
E
TJ, JUNCTION TEMPERATURE (
oC)
VGS = VDS, ID = 250A
T
HRES
H
OL
D
V
O
L
T
A
G
E
1.0
1.1
1.2
-40
0
40
80
120
160
200
0.9
-80
TJ, JUNCTION TEMPERATURE (
oC)
NOR
M
AL
IZ
ED
DRAIN
T
O
SOURCE
BREAKDO
WN
V
O
L
T
A
GE
ID = 250A
100
200
300
400
500
10
20
30
40
50
60
0
C,
CAP
A
C
IT
ANCE
(
p
F
)
VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
COSS
CRSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
2
4
6
8
10
369
12
0
V
GS
,GA
T
E
T
O
SOURCE
V
O
L
T
A
GE
(
V
)
VDD = 30V
Qg, GATE CHARGE (nC)
ID = 19A
ID = 15A
ID = 10A
ID = 5A
WAVEFORMS IN
DESCENDING ORDER:
HUFA75309P3, HUFA75309D3, HUFA75309D3S
相关PDF资料 |
PDF描述 |
|---|---|
| HUFA75309P3 | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| HUFA75309T3ST | 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET |
| HUFA75321D3 | 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs |
| HUFA75321D3S | 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs |
| HUFA75321P3 | 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HUFA75309D3ST | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75309P3 | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75309T3ST | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75321D3 | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75321D3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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