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参数资料
型号： HUFA75309D3S
厂商： FAIRCHILD SEMICONDUCTOR CORP
元件分类： JFETs
英文描述： 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
中文描述： 19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件页数： 9/10页
文件大小： 217K
代理商： HUFA75309D3S
2001 Fairchild Semiconductor Corporation
HUFA75309P3, HUFA75309D3, HUFA75309D3S Rev. B
SABER Electrical Model
REV February 1999
template HUFA75309 n2, n1, n3
electrical n2, n1, n3
{
var i iscl
d..model dbodymod = (is = 3.0e-13, cjo = 5.25e-10, tt = 3.09e-8, m = 0.5)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 3.8e-10, is = 1e-30, n = 10, m = 0.79)
m..model mmedmod = (type=_n, vto = 3.45, kp = 2, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.95, kp = 19, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 3.05, kp = 0.05, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.0, voff = -3.0)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -3.0, voff = -6.0)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 1.9, voff = 4.9)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 4.9, voff = 1.9)
c.ca n12 n8 = 3.85e-10
c.cb n15 n14 = 4.15e-10
c.cin n6 n8 = 3.17e-10
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 2.24e-9
l.lsource n3 n7 = 2.09e-9
m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u
res.rbreak n17 n18 = 1, tc1 = 1.05e-3, tc2 = -1.21e-7
res.rdbody n71 n5 = 1.04e-2, tc1 = 1.89e-3, tc2 = 0
res.rdbreak n72 n5 = 2.66e-1, tc1 = 1.31e-4, tc2 = 1.34e-5
res.rdrain n50 n16 = 9.1e-3, tc1 = 3.1e-2, tc2 = 3.7e-5
res.rgate n9 n20 = 1
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 22.4
res.rlsource n3 n7 = 20.9
res.rslc1 n5 n51 = 1e-6, tc1 = 2.71e-3, tc2 = 1.07e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 4.0e-2, tc1 = 0, tc2 = 0
res.rvtemp n18 n19 = 1, tc1 = -1.62e-3, tc2 = 1.29e-6
res.rvthres n22 n8 = 1, tc1 = -3.31e-3, tc2 = -4.31e-6
spe.ebreak n11 n7 n17 n18 = 59.22
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc = 1
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/43))** 4.5))
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
11
7
3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
10
5
51
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
-
+
-
6
RDBODY
RDBREAK
72
71
HUFA75309P3, HUFA75309D3, HUFA75309D3S
相关PDF资料
PDF描述
HUFA75309P3 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75309T3ST 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET
HUFA75321D3 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75321D3S 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75321P3 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs
相关代理商/技术参数
参数描述
HUFA75309D3ST 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75309P3 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75309T3ST 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75321D3 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75321D3S 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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