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参数资料
| 型号： | HUFA76409D3ST |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 18A DPAK |
| 产品变化通告： | Product Obsolescence 13/Aug/2010 |
| 标准包装： | 2,500 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 18A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 63 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 485pF @ 25V |
| 功率 - 最大： | 49W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
HUFA76409D3, HUFA76409D3ST
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
BV DSS
I DSS
I GSS
I D = 250 μ A, V GS = 0V (Figure 12)
I D = 250 μ A, V GS = 0V , T C = -40 o C (Figure 12)
V DS = 55V, V GS = 0V
V DS = 50V, V GS = 0V, T C = 150 o C
V GS = ± 16V
60
55
-
-
-
-
-
-
-
-
-
-
1
250
± 100
V
V
μ A
μ A
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS(TH)
r DS(ON)
V GS = V DS , I D = 250 μ A (Figure 11)
I D = 18A, V GS = 10V (Figures 9, 10)
I D = 8A, V GS = 5V (Figure 9)
I D = 8A, V GS = 4.5V (Figure 9)
1
-
-
-
-
0.052
0.060
0.064
3
0.063
0.071
0.075
V
?
?
?
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
R θ JC
R θ JA
TO-251AA, TO-252AA
-
-
-
-
3.06
100
o C/W
o C/W
Ambient
SWITCHING SPECIFICATIONS (V GS = 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
V DD = 30V, I D = 8A
V GS = 4.5V, R GS = 22 ?
(Figures 15, 21, 22)
-
-
-
-
-
-
-
13
89
22
37
-
153
-
-
-
-
89
ns
ns
ns
ns
ns
ns
SWITCHING SPECIFICATIONS (V GS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
V DD = 30V, I D = 18A
V GS = 10V,
R GS = 24 ?
(Figures 16, 21, 22)
-
-
-
-
-
-
-
5.3
34
41
50
-
59
-
-
-
-
136
ns
ns
ns
ns
ns
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Q g(TOT)
Q g(5)
Q g(TH)
Q gs
Q gd
V GS = 0V to 10V
V GS = 0V to 5V
V GS = 0V to 1V
V DD = 30V,
I D = 8A,
I g(REF) = 1.0mA
(Figures 14, 19, 20)
-
-
-
-
-
12
6.8
0.54
1.7
3
15
8.2
0.65
-
-
nC
nC
nC
nC
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V DS = 25V, V GS = 0V,
f = 1MHz
(Figure 13)
-
-
-
485
130
28
-
-
-
pF
pF
pF
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V SD
t rr
Q RR
TEST CONDITIONS
I SD = 8A
I SD = 4A
I SD = 8A, dI SD /dt = 100A/ μ s
I SD = 8A, dI SD /dt = 100A/ μ s
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.0
70
165
UNITS
V
V
ns
nC
?2001 Fairchild Semiconductor Corporation
HUFA76409D3, HUFA76409D3ST Rev. A1
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相关代理商/技术参数 |
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|---|---|
| HUFA76409D3ST_B76008A | 制造商:Fairchild Semiconductor Corporation 功能描述:FSCHUFA76409D3ST_B76008A N- CHANNEL MOSF |
| HUFA76409P3 | 功能描述:MOSFET 17a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA76409T3ST | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUFA76413D3 | 功能描述:MOSFET 20a 60V 0.056 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA76413D3S | 功能描述:MOSFET 20a 60V 0.056 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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