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参数资料
| 型号： | HUFA76409D3ST |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 8/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 18A DPAK |
| 产品变化通告： | Product Obsolescence 13/Aug/2010 |
| 标准包装： | 2,500 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 18A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 63 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 485pF @ 25V |
| 功率 - 最大： | 49W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
HUFA76409D3, HUFA76409D3ST
SABER Electrical Model
REV 23 August 1999
template HUFA76409d n2,n1,n3
electrical n2,n1,n3
{
var i iscl
d..model dbodymod = (is = 3.84e-13, cjo = 6.40e-10, tt = 5.10e-8, xti = 4.35, m = 0.52)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 3.70e-10, is = 1e-30, m = 0.79)
m..model mmedmod = (type=_n, vto = 2.08, kp = 3.2, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 2.40, kp = 28, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 1.80, kp = 0.08, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5, voff = -2.8)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -2.8, voff = -5)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.5, voff = 0.5)
10
DPLCAP
5
LDRAIN
DRAIN
2
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -0.5)
c.ca n12 n8 = 6.30e-10
c.cb n15 n14 = 6.30e-10
c.cin n6 n8 = 4.60e-10
RSLC2
RSLC1
51
ISCL
RDBREAK
72
RLDRAIN
RDBODY
i.it n8 n17 = 1
l.lsource n3 n7 = 3.43e-9
9
20
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
LGATE
GATE
l.ldrain n2 n5 = 1.00e-9 1
l.lgate n1 n9 = 3.73e-9
RLGATE
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
-
ESG
+
EVTEMP
RGATE + 18 -
22
6
8
6
EVTHRES
+ 19 -
8
CIN
50
RDRAIN
16
21
MMED
MSTRO
8
DBREAK
11
MWEAK
EBREAK
+
17
18
-
RSOURCE
7
71
DBODY
LSOURCE
RLSOURCE
SOURCE
3
res.rbreak n17 n18 = 1, tc1 = 1.13e-3, tc2 = -3.00e-7
res.rdbody n71 n5 = 1.56e-2, tc1 = -1.0e-3, tc2 = 7.00e-6
res.rdbreak n72 n5 = 3.70e-1, tc1 = 9.10e-4, tc2 = -1e-6
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
res.rdrain n50 n16 = 1.88e-2, tc1 = 9.80e-3, tc2 = 2.85e-5
S1B
S2B
RVTEMP
res.rgate n9 n20 = 3.76
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 37.3
res.rlsource n3 n7 = 34.3
res.rslc1 n5 n51= 1e-6, tc1 = 5.00e-3, tc2 = 5.05e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 2.40e-2, tc1 = 1.5e-3, tc2 =1e-6
res.rvtemp n18 n19 = 1, tc1 = -1.68e-3, tc2 = 8.00e-7
CA
13
+
EGS
-
6
8
CB
+
EDS
-
5
8
14
8
IT
RVTHRES
19
-
VBAT
+
22
res.rvthres n22 n8 = 1, tc1 = -1.48e-3, tc2 = -8.30e-6
spe.ebreak n11 n7 n17 n18 = 66.55
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/43))** 3))
}
}
?2001 Fairchild Semiconductor Corporation
HUFA76409D3, HUFA76409D3ST Rev. A1
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| HUFA76419D3ST | MOSFET N-CH 60V 20A DPAK |
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| HX 50-P | SENSOR CURRENT 50A -/+15V MOD |
| HY 20-P | CURRENT TRANSDUCERS 20A 15V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HUFA76409D3ST_B76008A | 制造商:Fairchild Semiconductor Corporation 功能描述:FSCHUFA76409D3ST_B76008A N- CHANNEL MOSF |
| HUFA76409P3 | 功能描述:MOSFET 17a 60V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA76409T3ST | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUFA76413D3 | 功能描述:MOSFET 20a 60V 0.056 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA76413D3S | 功能描述:MOSFET 20a 60V 0.056 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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