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参数资料
| 型号： | HX6356KVRT |
| 元件分类： | SRAM |
| 英文描述： | 32K X 8 STANDARD SRAM, 25 ns, UUC |
| 封装： | DIE |
| 文件页数： | 1/12页 |
| 文件大小： | 145K |
| 代理商： | HX6356KVRT |
32K x 8 STATIC RAM—SOI
HX6356
Aerospace Electronics
FEATURES
RADIATION
Fabricated with RICMOS IV Silicon on Insulator (SOI)
0.75
m Process (L
eff = 0.6 m)
Total Dose Hardness through 1x106 rad(SiO
2)
Neutron Hardness through 1x1014 cm-2
Dynamic and Static Transient Upset Hardness
through 1x1011 rad(Si)/s
Dose Rate Survivability through 1x1012 rad(Si)/s
Soft Error Rate of <1x10-10 upsets/bit-day
in Geosynchronous Orbit
Latchup Free
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened Static RAM is a high
performance 32,768 word x 8-bit static random access
memory with industry-standard functionality. It is fabricated
with Honeywell’s radiation hardened technology, and is
designed for use in systems operating in harsh, transient
radiation environments. The RAM operates over the full
military temperature range and requires only a single 5 V
±
10% power supply. The RAM is available with either TTL or
CMOS compatible I/O. Power consumption is typically less
than 15 mW/MHz in operation, and less than 5 mW when
de-selected. The RAM read operation is fully asynchro-
nous, with an associated typical access time of 14 ns at 5V.
Honeywell’s enhanced SOI RICMOSIV (Radiation Insen-
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout and pro-
cess hardening techniques. The RICMOS IV process is a
5-volt, SIMOX CMOS technology with a 150 gate oxide
and a minimum drawn feature size of 0.75
m (0.6 m
effective gate length—L
eff).
Additional features include
tungsten via plugs, Honeywell’s proprietary SHARP pla-
narization process, and a lightly doped drain (LDD) struc-
ture for improved short channel reliability. A 7 transistor
(7T) memory cell is used for superior single event upset
hardening, while three layer metal power bussing and the
low collection volume SIMOX substrate provide improved
dose rate hardening.
OTHER
Listed On SMD# 5962-95845
Fast Read/Write Cycle Times
≤ 17 ns (Typical)
≤ 25 ns (-55 to 125°C)
Typical Operating power < 15 mW/MHz
Asynchronous Operation
CMOS or TTL Compatible I/O
Single 5 V
± 10% Power Supply
Packaging Options
- 36-Lead CFP—Bottom Braze (0.630 in. x 0.650 in.)
- 36-Lead CFP—Top Braze (0.630 in. x 0.650 in.)
相关PDF资料 |
PDF描述 |
|---|---|
| HX6356KSFC | 32K X 8 STANDARD SRAM, 25 ns, UUC |
| HY27SA081G1M-FPEB | 128M X 8 FLASH 1.8V PROM, 12000 ns, PBGA63 |
| HY27SA081G1M-VPEB | 128M X 8 FLASH 1.8V PROM, 12000 ns, PDSO48 |
| HY27UA081G1M-TIB | 128M X 8 FLASH 3.3V PROM, 12000 ns, PDSO48 |
| HY27US08121B-TPIS | 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HX6356PBFC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356PBFT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356PBHC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356PBHT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356PBNC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:32K x 8 STATIC RAM-SOI |
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