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参数资料
| 型号： | HX6356KVRT |
| 元件分类： | SRAM |
| 英文描述： | 32K X 8 STANDARD SRAM, 25 ns, UUC |
| 封装： | DIE |
| 文件页数： | 12/12页 |
| 文件大小： | 145K |
| 代理商： | HX6356KVRT |
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HX6356
TESTER AC TIMING CHARACTERISTICS
QUALITY AND RADIATION HARDNESS
ASSURANCE
Honeywell maintains a high level of product integrity through
process control, utilizing statistical process control, a com-
plete “Total Quality Assurance System,” a computer data
base process performance tracking system, and a radia-
tion-hardness assurance strategy.
The radiation hardness assurance strategy starts with a
technology that is resistant to the effects of radiation.
Radiation hardness is assured on every wafer by irradiating
test structures as well as SRAM product, and then monitor-
ing key parameters which are sensitive to ionizing radiation.
Conventional MIL-STD-883 TM 5005 Group E testing,
which includes total dose exposure with Cobalt 60, may
also be performed as required. This Total Quality approach
ensures our customers of a reliable product by engineering
in reliability, starting with process development and con-
tinuing through product qualification and screening.
SCREENING LEVELS
Honeywell offers several levels of device screening to meet
your system needs. “Engineering Devices” are available
with limited performance and screening for breadboarding
and/or evaluation testing. Hi-Rel Level B and S devices
undergo additional screening per the requirements of MIL-
STD-883. As a QML supplier, Honeywell also offers QML
Class Q and V devices per MIL-PRF-38535 and are avail-
able per the applicable Standard Microcircuit Drawing (SMD).
QML devices offer ease of procurement by eliminating the
need to create detailed specifications and offer benefits of
improved quality and cost savings through standardization.
RELIABILITY
Honeywell understands the stringent reliability require-
ments for space and defense systems and has extensive
experience in reliability testing on programs of this nature.
This experience is derived from comprehensive testing of
VLSI processes. Reliability attributes of the RICMOSTM
process were characterized by testing specially designed
irradiated and non-irradiated test structures from which
specific failure mechanisms were evaluated. These specific
mechanisms included, but were not limited to, hot carriers,
electromigration and time dependent dielectric breakdown.
This data was then used to make changes to the design
models and process to ensure more reliable products.
In addition, the reliability of the RICMOSTM process and
product in a military environment was monitored by testing
irradiated and non-irradiated circuits in accelerated dy-
namic life test conditions. Packages are qualified for prod-
uct use after undergoing Groups B & D testing as outlined
in MIL-STD-883, TM 5005, Class S. The product is qualified
by following a screening and testing flow to meet the
customer’s requirements. Quality conformance testing is
performed as an option on all production lots to ensure the
ongoing reliability of the product.
High Z = 2.9V
3 V
0 V
1.5 V
VDD-0.5 V
0.5 V
VDD/2
1.5 V
VDD-0.4V
0.4 V
High Z
3.4 V
2.4 V
High Z
VDD/2
0.4 V
High Z
3.4 V
2.4 V
High Z
TTL I/O Configuration
Input
Levels*
Output
Sense
Levels
CMOS I/O Configuration
High Z = 2.9V
* Input rise and fall times <1 ns/V
VDD-0.4V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HX6356PBFC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356PBFT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356PBHC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356PBHT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356PBNC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:32K x 8 STATIC RAM-SOI |
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