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参数资料
| 型号： | HX6356KVRT |
| 元件分类： | SRAM |
| 英文描述： | 32K X 8 STANDARD SRAM, 25 ns, UUC |
| 封装： | DIE |
| 文件页数： | 7/12页 |
| 文件大小： | 145K |
| 代理商： | HX6356KVRT |
HX6356
4
Parameter
Max
Symbol
Test Conditions
Worst Case
Units
CAPACITANCE (1)
Symbol
Test Conditions
Min
Max
Typical
(1)
Units
500
A
NCS=VDD=2.5V, VI=VDD or VSS
330
A
NCS=VDD=3.0V, VI=VDD or VSS
VDR
Data Retention Voltage
2.5
V
IDR
Data Retention Current
NCS=VDR
VI=VDR or VSS
(1) This parameter is tested during initial design characterization only.
RECOMMENDED OPERATING CONDITIONS
Symbol
Max
Typ
Description
Parameter
Min
Worst Case (2)
Units
VDD
Supply Voltage (referenced to VSS)
4.5
5.0
5.5
V
TA
Ambient Temperature
-55
25
125
°C
VPIN
Voltage on Any Pin (referenced to VSS)
-0.3
VDD+0.3
V
Min
Typical
(1)
CI
Input Capacitance
7
pF
VI=VDD or VSS, f=1 MHz
CO
Output Capacitance
9
pF
VIO=VDD or VSS, f=1 MHz
(1) Typical operating conditions: TA= 25
°C, pre-radiation.
(2) Worst case operating conditions: -55
°C to +125°C, post total dose at 25°C.
DATA RETENTION CHARACTERISTICS
Parameter
ABSOLUTE MAXIMUM RATINGS (1)
VDD
Positive Supply Voltage (2)
-0.5
6.5
V
VPIN
Voltage on Any Pin (2)
-0.5
VDD+0.5
V
TSTORE
Storage Temperature (Zero Bias)
-65
150
°C
TSOLDER
Soldering Temperature (5 Seconds)
270
°C
PD
Total Package Power Dissipation (3)
2.0
W
IOUT
DC or Average Output Current
25
mA
VPROT
ESD Input Protection Voltage (4)
2000
V
ΘJC
Thermal Resistance (Jct-to-Case)
– 36 FP
2
°C/W
TJ
Junction Temperature
175
°C
Parameter
Symbol
Units
Rating
Min
Max
(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not
implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.
(2) Voltage referenced to VSS.
(3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this specification.
(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab.
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